Growth and Characterization of High Power AlInN/GaN HEMTs

被引：2
|
作者：
Chyi, J. -I. [1 ,2 ,3 ,4 ]
Lee, G. Y. [1 ]
Tu, P. T. [1 ]
Yeh, N. T. [4 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli, Taiwan
[2] Acad Sinica, Res Ctr Appl Sci, Chungli, Taiwan
[3] Natl Appl Res Lab, Chungli, Taiwan
[4] Natl Ctr Univ, Opt Sci Ctr, Chungli, Taiwan
来源：
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 15 | 2014年 / 61卷 / 04期
关键词：
BARRIER;
D O I：
10.1149/06104.0003ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this work, growth of AlInN and its application to AlInN/GaN metal-oxide-semiconductor high electron mobility transistors are investigated. It is found that a GaN cap on AlInN layer improves the transistor's off-state breakdown voltage (V-B) and on-state resistance (R-on).
引用
收藏
页码：3 / 8
页数：6
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