Theoretical Study of drain current of AlInN/GaN HEMTs on SiC Substrate

被引：0

作者：

Hossain, Md. Iqbal ^{[1
]}

Islam, Khandakar Nusrat ^{[2
]}

Howlader, Chandan Qumar ^{[2
]}

Mahmood, Zahid Hasan ^{[1
]}

机构：

[1] Univ Dhaka, Dept Appl Phys Elect & Commun Engn, Dhaka 1000, Bangladesh

[2] KUET, Dept Elect & Elect Engn, Khulna 9203, Bangladesh

来源：

16TH INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES | 2012年 / 8549卷

关键词：

HEMT; drain current; heterostructure; electron mobility;

D O I：

10.1117/12.927259

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A new heterostructure based on AlxIn(1-x)N/GaN high electron mobility transistor (HEMT) on SiC substrate has been proposed for high frequency, where it offers the best performance in comparison to other two heterostructures like on AlxGa(1-x)N/GaN and InxGa(1-x)N/GaN. We have investigated the effect of different higher output characteristics in comparison to conventional AlxGa(1-x)N/GaN and InxGa(1-x)N/GaN with the AlxIn(1-x)N/GaN heterostructure, where the drain current is maximum for AlxIn(1-x)N/GaN and AlxGa(1-x)N/GaN heterostructure HEMT respectively for the same barrier thickness and for the same gate source voltage.

引用

页数：6

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