Theoretical Study of drain current of AlInN/GaN HEMTs on SiC Substrate

A new heterostructure based on AlxIn(1-x)N/GaN high electron mobility transistor (HEMT) on SiC substrate has been proposed for high frequency, where it offers the best performance in comparison to other two heterostructures like on AlxGa(1-x)N/GaN and InxGa(1-x)N/GaN. We have investigated the effect of different higher output characteristics in comparison to conventional AlxGa(1-x)N/GaN and InxGa(1-x)N/GaN with the AlxIn(1-x)N/GaN heterostructure, where the drain current is maximum for AlxIn(1-x)N/GaN and AlxGa(1-x)N/GaN heterostructure HEMT respectively for the same barrier thickness and for the same gate source voltage.