Circuit-Level Reliability Simulator for Front-End-of-Line and Middle-of-Line Time-Dependent Dielectric Breakdown in FinFET Technology

被引：0

作者：

Yang, Kexin ^{[1
]}

Liu, Taizhi ^{[1
]}

Zhang, Rui ^{[1
]}

Milor, Linda ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

来源：

2018 IEEE 36TH VLSI TEST SYMPOSIUM (VTS 2018) | 2018年

基金：

美国国家科学基金会;

关键词：

time-dependent dielectric breakdown; lifetime simulator; wearout; frontend-of-line dielectric breakdown; middle-of-line breakdown; digital circuit; microprocessor; reliability;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents a lifetime simulator for both Front-End-of-Line (FEOL) time dependent dielectric breakdown (TDDB) and the newly emerging Middle-of-Line (MOL) time dependent dielectric breakdown for FinFET technology. A lifetime assessment flow for digital circuits and microprocessors is proposed for the target wearout mechanisms, and its associated vulnerable feature extraction algorithms are discussed in detail. Our simulator incorporates the detailed electrical stress, temperature, linewidth of each standard cell within the digital circuit and microprocessor. Also, FEOL TDDB and MOL TDDB lifetimes are combined in the calculation of TDDB lifetime. Circuit designers can use the resulting lifetime information to guide and improve their circuits to make them more robust and reliable.

引用

页数：6

共 16 条

[1] Front-end of line and middle-of-line time-dependent dielectric breakdown reliability simulator for logic circuits
Yang, Kexin
Liu, Taizhi
Zhang, Rui
Kim, Dae-Hyun
Milor, Linda
MICROELECTRONICS RELIABILITY, 2017, 76 : 81 - 86
[2] Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device
Waite, Adam R.
Patel, Yash
Kelley, John J.
Scholl, Jonathan H.
Baur, Joshua
Kimura, Adam
Udelhoven, Eric D.
Via, Glen David
Ott, Richard
Brooks, Daniel L.
PROCEEDINGS OF THE 2021 IEEE INTERNATIONAL CONFERENCE ON PHYSICAL ASSURANCE AND INSPECTION ON ELECTRONICS (PAINE), 2021,
[3] Simulation study for lifetime distribution of middle-of-line time-dependent dielectric breakdown affected by global and local spacing variations
Yokogawa, Shinji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (06)
[4] Simulation study for lifetime distribution of middle-of-line time-dependent dielectric breakdown affected by global and local spacing variations
Info-Powered Energy System Research Center, University of Electro-Communications, Chofu
182-8585, Japan
Jpn. J. Appl. Phys., 1600, 63
[5] Processor-level reliability simulator for time-dependent gate dielectric breakdown
Chen, Chang-Chih
Liu, Taizhi
Cha, Soonyoung
Milor, Linda
MICROPROCESSORS AND MICROSYSTEMS, 2015, 39 (08) : 950 - 960
[6] A Comprehensive Time-Dependent Dielectric Breakdown Lifetime Simulator for Both Traditional CMOS and FinFET Technology
Yang, Kexin
Liu, Taizhi
Zhang, Rui
Milor, Linda
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2018, 26 (11) : 2470 - 2482
[7] Post-Routing Back-End-Of-Line Layout Optimization for Improved Time-Dependent Dielectric Breakdown Reliability
Chan, Tuck-Boon
Kahng, Andrew B.
DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VII, 2013, 8684
[8] Statistical characteristics of lifetime distribution based on defect clustering for time-dependent dielectric breakdown in middle-and back-end-of-line
Yokogawa, Shinji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (05)
[9] Optimal Accelerated Test Regions for Time-Dependent Dielectric Breakdown Lifetime Parameters Estimation in FinFET Technology
Yang, Kexin
Zhang, Rui
Liu, Taizhi
Kim, Dae-Hyun
Milor, Linda
2018 XXXIII CONFERENCE ON DESIGN OF CIRCUITS AND INTEGRATED SYSTEMS (DCIS), 2018,
[10] A Realistic Method for Time-Dependent Dielectric Breakdown Reliability Analysis for Advanced Technology Node
Yeap, Kong Boon
Chen, Fen
Yao, Huade Walter
Shen, Tian
Yap, Sing Fui
Justison, Patrick
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (02) : 755 - 759

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