Design of Lange Couplers with Local Ground References using SiGe BiCMOS Technology for mm-Wave Applications

被引：0
|
作者：
Wane, S. [1 ]
Leyssenne, L. [2 ]
Tesson, O. [1 ]
Doussin, O. [3 ]
Bajon, D. [3 ]
Lesenechal, D. [2 ]
Dinh, T. V. [2 ]
van Heijden, M. P. [4 ]
Pijper, Ralf [4 ]
Magnee, P. [5 ]
Descamps, P. [2 ]
Erdem, A. [1 ]
机构：
[1] NXP Semicond France, Hamburg, Germany
[2] NXP LaMIPS Caen, Caen, France
[3] ISAE Toulouse, Toulouse, France
[4] NXP Semicond Eindhoven, Eindhoven, Netherlands
[5] NXP Semicond Nijmegen, Nijmegen, Netherlands
来源：
PROCEEDINGS OF THE 2015 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC 2015) | 2015年
关键词：
Lange Coupler; SiGe BiCMOS; mm-Wave; Power Combining; Broadband equivalent circuit;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SiGe BiCMOS design solutions for Lange Couplers operating in the mm-Wave domain are proposed. Various circuit topologies are designed, fabricated, and experimentally compared in terms of their RF performances. Effect of grounding strategies and influence of DTI pattering are studied both for CPS and CPW topologies to evaluate dependence of obtained RF performances on Die back-side grounding strategies. Perspectives for physics-based broadband equivalent circuit model extraction are proposed for lumped elements implementation of Lange Couplers using custom variation-aware RLC library elements.
引用
收藏
页码：351 / 354
页数：4
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