SiGe HBT modeling for mm-wave circuit design

被引：0
|
作者：
Pawlak, Andreas [1 ]
Lehmann, Steffen [1 ]
Sakalas, Paulius [1 ,2 ]
Krause, Julia [1 ]
Aufinger, Klaus [3 ]
Ardouin, Bertrand [4 ]
Schroter, Michael [1 ,5 ]
机构：
[1] Tech Univ Dresden, Dresden, Germany
[2] Ctr Phys Sci & Technol, Vilnius, Lithuania
[3] Infineon Technol, Munich, Germany
[4] XMOD Technol, Bordeaux, France
[5] Univ Calif San Diego, La Jolla, CA 92093 USA
来源：
2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2015年
关键词：
ELECTRICAL PERFORMANCE LIMITS; BIPOLAR-TRANSISTOR; CHARGE;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.
引用
收藏
页码：149 / 156
页数：8
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