SiGe HBT modeling for mm-wave circuit design

被引：0

作者：

Pawlak, Andreas ^{[1
]}

Lehmann, Steffen ^{[1
]}

Sakalas, Paulius ^{[1
,2
]}

Krause, Julia ^{[1
]}

Aufinger, Klaus ^{[3
]}

Ardouin, Bertrand ^{[4
]}

Schroter, Michael ^{[1
,5
]}

机构：

[1] Tech Univ Dresden, Dresden, Germany

[2] Ctr Phys Sci & Technol, Vilnius, Lithuania

[3] Infineon Technol, Munich, Germany

[4] XMOD Technol, Bordeaux, France

[5] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2015年

关键词：

ELECTRICAL PERFORMANCE LIMITS; BIPOLAR-TRANSISTOR; CHARGE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.

引用

页码：149 / 156

页数：8

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