ONE SYK SINGLE ELECTRON TRANSISTOR

被引:0
|
作者
Khveshchenko, D., V [1 ]
机构
[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA
来源
LITHUANIAN JOURNAL OF PHYSICS | 2020年 / 60卷 / 03期
关键词
single electron transistor; SYK model; soft collective modes; QUANTUM; MODEL;
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We study the behaviour of a single electron transistor (SET) represented by a dissipative tunnel junction between a pair of quantum dots described by two (possibly, different) Sachdev-Ye-Kitaev (SYK) models. A combined influence of the soft collective charge and energy modes on charge transport is discussed, alongside the competing effects of the Coulomb blockade and emergent Kondo resonances which might all conspire to result in a non-monotonic behaviour of the system's conductance.
引用
收藏
页码:185 / 193
页数:9
相关论文
共 50 条
  • [21] Ferritin Single-Electron Transistor
    Labra-Munoz, Jacqueline A.
    van der Zant, Herre S. J.
    JOURNAL OF PHYSICAL CHEMISTRY B, 2024, 128 (26): : 6387 - 6393
  • [22] Tunable graphene single electron transistor
    Stampfer, C.
    Schurtenberger, E.
    Molitor, F.
    Guettinger, J.
    Ihn, T.
    Ensslin, K.
    NANO LETTERS, 2008, 8 (08) : 2378 - 2383
  • [23] The single electron transistor and artificial atoms
    Kastner, MA
    ANNALEN DER PHYSIK, 2000, 9 (11-12) : 885 - 894
  • [24] SINGLE SHOT MEASUREMENT OF A SILICON SINGLE ELECTRON TRANSISTOR
    Ferrus, T.
    Hasko, D. G.
    Morrissey, Q. R.
    Burge, S. R.
    Freeman, E. J.
    French, M. J.
    Lam, A.
    Creswell, L.
    Collier, R. J.
    Williams, D. A.
    Briggs, G. A. D.
    PROCEEDINGS OF THE 9TH INTERNATIONAL SYMPOSIUM ON FOUNDATIONS OF QUANTUM MECHANICS IN THE LIGHT OF NEW TECHNOLOGY, 2009, : 317 - +
  • [25] Conductance of single-electron transistor with single island
    Sui Bing-Cai
    Fang Liang
    Zhang Chao
    ACTA PHYSICA SINICA, 2011, 60 (07)
  • [26] Single shot measurement of a silicon single electron transistor
    Hasko, D. G.
    Ferrus, T.
    Morrissey, Q. R.
    Burge, S. R.
    Freeman, E. J.
    French, M. J.
    Lam, A.
    Creswell, L.
    Collier, R. J.
    Williams, D. A.
    Briggs, G. A. D.
    APPLIED PHYSICS LETTERS, 2008, 93 (19)
  • [27] ONE-ELECTRON TRANSISTOR GETS WARMER
    不详
    ELECTRONICS WORLD & WIRELESS WORLD, 1995, (1713): : 631 - 631
  • [28] Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K
    Jones, G. M.
    Hu, B. H.
    Yang, C. H.
    Yang, M. J.
    Lyanda-Geller, Y. B.
    APPLIED PHYSICS LETTERS, 2006, 88 (19)
  • [29] Electron dynamics in quantum qubits coupled with the single electron transistor
    Taranko, R.
    Parafiniuk, P.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (08): : 2765 - 2775
  • [30] VOLTAGE GAIN IN THE SINGLE-ELECTRON TRANSISTOR
    ZIMMERLI, G
    KAUTZ, RL
    MARTINIS, JM
    APPLIED PHYSICS LETTERS, 1992, 61 (21) : 2616 - 2618