Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K

被引：4

作者：

Jones, G. M. ^{[1
]}

Hu, B. H.

Yang, C. H.

Yang, M. J.

Lyanda-Geller, Y. B.

机构：

[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20904 USA

[2] USN, Res Lab, Washington, DC 20375 USA

[3] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期

关键词：

D O I：

10.1063/1.2202100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20 meV orbital energy spacing, which imply a quantum dot of 20 nm in diameter. Combining with the inherent advantage of a large electron g(*) factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing. (c) 2006 American Institute of Physics.

引用

页数：3

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