Observation of one-electron charge in an enhancement-mode InAs single-electron transistor at 4.2 K

被引：4
|
作者：
Jones, G. M. [1 ]
Hu, B. H.
Yang, C. H.
Yang, M. J.
Lyanda-Geller, Y. B.
机构：
[1] Univ Maryland, Dept Elect & Comp Engn, College Pk, MD 20904 USA
[2] USN, Res Lab, Washington, DC 20375 USA
[3] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 19期
关键词：
D O I：
10.1063/1.2202100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate experimentally single-electron quantum dots using a single-top-gate transistor configuration on a composite quantum well. The data indicate a 15 meV Coulomb charging energy and a 20 meV orbital energy spacing, which imply a quantum dot of 20 nm in diameter. Combining with the inherent advantage of a large electron g(*) factor in InAs, our demonstration is significant for a solid state implementation of a scalable quantum computing. (c) 2006 American Institute of Physics.
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页数：3
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