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CDS4C: A Novel CDS ASIC for a Multi-Readout X-ray CCD with a 0.032% INL
被引:0
|作者:
Lu, Bo
[1
,2
,3
]
Chen, Yong
[1
]
Yang, Yanji
[1
]
Cui, Weiwei
[1
]
Liu, Hainan
[2
]
Zhou, Yumei
[2
]
机构:
[1] Chinese Acad Sci, Inst High Energy Phys, Key Lab Particle Astrophys, Beijing, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金:
中国国家自然科学基金;
关键词:
HXMT;
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This work presents the development of a four-channel correlated double sampling (CDS) ASIC, named CDS4C, targeting the readout of a type of multi-readout swept charge device (SCD) for applications in the fields of both Xray spectroscopy and imaging. Compared with conventional CDS architecture based on clamping technique, the innovation of the CDS4C ASIC is that it not only moves the clamping switch out of the signal path but also omits the sampling switch, eliminating the nonlinearity and thermal noise introduced by the these switches. Besides, it is implemented in a fully differential topology which suppresses the second-order harmonic distortion, improving the linearity further more. A theoretical noise analysis taking into consideration of the limited bandwidth of the operational-amplifier (OPA) highly coincides with the simulation results. A prototype of the CDS4C ASIC is fabricated with GlobalFoundries 0.35 mu m CMOS process, the preliminary experimental results show that, within the effective input dynamic range of 0 similar to 20mV which is equivalent to a wide range of soft X-ray energy band from 0 to 18.25keV, 0.032% integral nonlinearity (INL) and 35.5 mu V input-referred readout noise are achieved under 200kHz pixel rate with 8x gain, while the total power consumption is only 8.8m W from a single 3.3V supply voltage.
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页数:5
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