1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks

被引：105

作者：

Magnone, P. ^{[1
]}

Crupi, F. ^{[1
]}

Giusi, G. ^{[1
]}

Pace, C. ^{[1
]}

Simoen, E. ^{[2
]}

Claeys, C. ^{[2
,3
]}

Pantisano, L. ^{[2
]}

Maji, D. ^{[4
]}

Rao, V. Ramgopal ^{[4
]}

Srinivasan, P. ^{[5
]}

机构：

[1] Univ Calabria, Dipartimento Elettron Informat & Sistemist, I-87036 Cosenza, Italy

[2] Interuniv Microelect Ctr, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[4] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[5] Texas Instruments Inc, Dallas, TX 75243 USA

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2009年 / 9卷 / 02期

关键词：

Drain noise; gate noise; high-k dielectric; MOSFET; 1/f noise; LOW-FREQUENCY NOISE; FLICKER NOISE; IMPACT; BEHAVIOR; DIELECTRICS; NMOSFETS; MOBILITY; DEFECTS; PERFORMANCE; TRANSISTORS;

D O I：

10.1109/TDMR.2009.2020406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we investigate the quality of MOSFET gate stacks where high-k materials are implemented as gate dielectrics. We evaluate both drain- and gate-current noises in order to obtain information about the defect content of the gate stack. We analyze how the overall quality of the gate stack depends on the kind of high-k material, on the interfacial layer thickness, on the kind of gate electrode material, on the strain engineering, and on the substrate type. This comprehensive study allows us to understand which issues need to be addressed in order to achieve improved quality of the gate stack from a 1/f noise point of view.

引用

页码：180 / 189

页数：10

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