High output power CW operation of a quantum dot laser.

被引：0
|
作者：
Ustinov, VM
Kovsh, AR
Livshits, DA
Zhukov, AE
Egorov, AY
Maximov, MV
Tarasov, IS
Ledentsov, NN
Kop'ev, PS
Alferov, ZI
Bimberg, D
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
来源：
COMPOUND SEMICONDUCTORS 1999 | 2000年 / 166期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Two types of InGaAs/GaAs quantum dot diode lasers whose active regions are based on coherent islands formed upon Stranski-Krastanov growth (SK laser) and InAs/GaAs submonolayer deposition (SML laser) were fabricated. M operation was realized for both types of lasers. The SK and SML lasers demonstrated 3.5 and 3.8 W output power, respectively, per both facets for 100-mum-wide stripes with uncoated facets. The SML laser with high-reflectivity and anti-reflective coatings showed 4 W CW and 20 W pulsed (100 ns - wide pulses) front-facet power. The results obtained show that quantum dot lasers are perspective for high-power applications.
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页码：277 / 280
页数：4
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