Intersubband transitions in InGaAs/InAlAs multiple quantum wells grown on inp substrate.

被引：0
|
作者：
Zhou, QY [1 ]
Manasreh, MO [1 ]
Weaver, BD [1 ]
Missous, M [1 ]
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA
来源：
PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS | 2002年 / 692卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched 10 substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells, Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Angstrom. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.
引用
收藏
页码：253 / 258
页数：6
相关论文
共 50 条
  • [41] Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators
    Pires, MP
    Tribuzy, CVB
    Yavich, B
    Souza, PL
    10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY, 2003, 5023 : 323 - 326
  • [42] INTERSUBBAND TRANSITIONS IN HIGH INDIUM CONTENT INGAAS/ALGAAS QUANTUM-WELLS
    CHUI, HC
    LORD, SM
    MARTINET, E
    FEJER, MM
    HARRIS, JS
    APPLIED PHYSICS LETTERS, 1993, 63 (03) : 364 - 366
  • [43] NONLINEAR-OPTICAL ABSORPTION IN INGAAS/INALAS MULTIPLE QUANTUM WELLS
    MACE, DAH
    FISHER, MA
    BURT, MG
    SCOTT, EG
    ADAMS, MJ
    OPTICS LETTERS, 1990, 15 (03) : 189 - 191
  • [44] Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates
    G. B. Galiev
    A. N. Klochkov
    I. S. Vasil’evskii
    E. A. Klimov
    S. S. Pushkarev
    A. N. Vinichenko
    R. A. Khabibullin
    P. P. Maltsev
    Semiconductors, 2017, 51 : 760 - 765
  • [45] MgSe/ZnSe/CdSe coupled quantum wells grown on InP substrate with intersubband absorption covering 1.55 μm
    Chen, Guopeng
    De Jesus, Joel
    Tamargo, Maria C.
    Shen, Aidong
    APPLIED PHYSICS LETTERS, 2014, 105 (23)
  • [46] Bandgap control for the lattice-matched InGaAs/InAlAs/InP single quantum wells
    Wang, Y.
    Sheng, X. Z.
    Guo, Q. L.
    Liang, B. L.
    1ST INTERNATIONAL CONFERENCE ON NEW MATERIAL AND CHEMICAL INDUSTRY (NMCI2016), 2017, 167
  • [47] Electron Properties of Surface InGaAs/InAlAs Quantum Wells with Inverted Doping on InP Substrates
    Galiev, G. B.
    Klochkov, A. N.
    Vasil'evskii, I. S.
    Klimov, E. A.
    Pushkarev, S. S.
    Vinichenko, A. N.
    Khabibullin, R. A.
    Maltsev, P. P.
    SEMICONDUCTORS, 2017, 51 (06) : 760 - 765
  • [48] Intersubband χ3 in coupled InGaAs-AlGaAs multiple quantum wells
    Rabinovich, WS
    Beadie, G
    Katzer, DS
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (06) : 975 - 981
  • [49] Influence of the Spin-Orbit Split-Off Band on the dwell time of holes above InAlAs/InGaAs/InAlAs and InP/InGaAs/InP Quantum Wells
    Ekbote, S
    Garber, B
    Cahay, M
    Roenker, K
    COMPOUND SEMICONDUCTOR POWER TRANSISTORS AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 1998, 98 (12): : 182 - 200
  • [50] InP/InAlAs/InGaAs-quantum wires
    Kappelt, M
    Turck, V
    Grundmann, M
    Cerva, H
    Bimberg, D
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 757 - 760
12345