Intersubband transitions in InGaAs/InAlAs multiple quantum wells grown on inp substrate.

被引：0

作者：

Zhou, QY ^{[1
]}

Manasreh, MO ^{[1
]}

Weaver, BD ^{[1
]}

Missous, M ^{[1
]}

机构：

[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA

来源：

PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS | 2002年 / 692卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched 10 substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells, Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Angstrom. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

引用

页码：253 / 258

页数：6

共 50 条

[21] OPTICAL CHARACTERIZATIONS OF (111) ORIENTED INGAAS/INALAS STRAINED QUANTUM-WELLS GROWN ON INP SUBSTRATES
NISHI, K
ANAN, T
JOURNAL OF APPLIED PHYSICS, 1991, 70 (09) : 5004 - 5009
[22] InGaAs/InAlAs quantum wells on wafer bonded InP/GaAs substrates
Hayashi, S
Sandhu, R
Chen, G
Hicks, R
Goorsky, MS
2005 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 2005, : 389 - 391
[23] Intersubband transitions in ZnO multiple quantum wells
Belmoubarik, M.
Ohtani, K.
Ohno, H.
APPLIED PHYSICS LETTERS, 2008, 92 (19)
[24] Crystal growth of InGaAs/InAlAs quantum wells on InP(110) by MBE
Yasuda, Yusuke
Koh, Shinji
Ikeda, Kazuhiro
Kawaguchi, Hitoshi
JOURNAL OF CRYSTAL GROWTH, 2013, 364 : 95 - 100
[25] Tight-binding design of intersubband transitions in InGaAs/AlAs quantum heterostructures grown pseudomorphically on InP
Jancu, JM
Beltram, F
Scholz, R
di Carlo, A
SUPERLATTICES AND MICROSTRUCTURES, 1999, 25 (1-2) : 351 - 355
[26] Trapping and recombination dynamics of low-temperature-grown InGaAs/InAlAs multiple quantum wells
Chen, Y
Prabhu, SS
Ralph, SE
McInturff, DT
APPLIED PHYSICS LETTERS, 1998, 72 (04) : 439 - 441
[27] NORMAL INCIDENCE INTERSUBBAND TRANSITIONS IN SI-DOPED INGAAS MULTIPLE-QUANTUM WELLS
PENG, LH
FONSTAD, CG
APPLIED PHYSICS LETTERS, 1993, 62 (25) : 3342 - 3344
[28] Intersubband transitions in high indium content InGaAs/AlGaAs quantum wells
1600, (63):
[29] STRAIN EFFECTS IN THE INTERSUBBAND TRANSITIONS OF NARROW INGAAS QUANTUM-WELLS
PENG, LH
SMET, JH
BROEKAERT, TPE
FONSTAD, CG
APPLIED PHYSICS LETTERS, 1993, 62 (19) : 2413 - 2415
[30] Photoluminescence study of InGaAs/InAlAs single and multiple quantum wells
Yang, QK
Chen, JX
Li, AZ
JOURNAL OF CRYSTAL GROWTH, 1998, 194 (01) : 31 - 36

← 1 2 3 4 5 →