Intersubband transitions in InGaAs/InAlAs multiple quantum wells grown on inp substrate.

被引：0
|
作者：
Zhou, QY [1 ]
Manasreh, MO [1 ]
Weaver, BD [1 ]
Missous, M [1 ]
机构：
[1] Univ New Mexico, Dept Elect & Comp Engn, Albuquerque, NM 87131 USA
来源：
PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS | 2002年 / 692卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Intersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched 10 substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells, Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Angstrom. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.
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页码：253 / 258
页数：6
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