Spontaneous polarization effects in GaN/AlxGa1-xN quantum wells

被引：50

作者：

Simon, J ^{[1
]}

Langer, R ^{[1
]}

Barski, A ^{[1
]}

Pelekanos, NT ^{[1
]}

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.61.7211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observe in GaN/AlxGa1-xN quantum wells with varying aluminum concentration strong electric fields whose amplitudes are significantly larger than those observed before in comparable structures fabricated at higher growth temperatures. We show that the measured fields are clearly stronger than what is expected based on piezoelectric effects alone, which constitutes a direct experimental proof of the existence of important spontaneous polarization effects in the GaN/AlxGa1-xN heterostructure system.

引用

页码：7211 / 7214

页数：4

共 50 条

[41] Ordered Hamiltonian and matching conditions for heterojunctions with wurtzite symmetry:: GaN/AlxGa1-xN quantum wells
Mireles, F
Ulloa, SE
PHYSICAL REVIEW B, 1999, 60 (19): : 13659 - 13667
[42] Intersubband transition in symmetric AlxGa1-xN/GaN double quantum wells with applied electric field
Lei, S. Y.
Dong, Z. G.
Shen, B.
Zhang, G. Y.
PHYSICS LETTERS A, 2008, 373 (01) : 136 - 139
[43] Influence of width of left well on intersubband transitions in AlxGa1-xN/GaN double quantum wells
Lei Shuang-Ying
Shen Bo
Zhang Guo-Yi
CHINESE PHYSICS LETTERS, 2008, 25 (09) : 3385 - 3388
[44] Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells
Wang Jian-Xia
Yang Shao-Yan
Wang Jun
Liu Gui-Peng
Li Zhi-Wei
Li Hui-Jie
Jin Dong-Dong
Liu Xiang-Lin
CHINESE PHYSICS B, 2013, 22 (07)
[45] Pressure-dependent reordering of valence band states in GaN/AlxGa1-xN quantum wells
Bardyszewski, W.
Lepkowski, S. P.
PHYSICAL REVIEW B, 2012, 85 (03)
[46] Screened excitons in strained wurtzite AlxGa1-xN/GaN/AlyGa1-yN quantum wells
Ha, S. H.
Ban, S. L.
Zhu, J.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 1, 2011, 8 (01): : 34 - 37
[47] Acoustic phonon modes in asymmetric AlxGa1-xN/GaN/AlyGa1-yN quantum wells
Zan, Y. H.
Ban, S. L.
Chai, Y. J.
Qu, Y.
SUPERLATTICES AND MICROSTRUCTURES, 2017, 102 : 64 - 73
[48] Low temperature photoluminescence study of AlxGa1-xN/GaN/AlxGa1-xN heterostructure nanocolumns
AbdelAll, Naglaa
ElGhoul, Jaber
Almokhtar, Mohamed
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (21)
[49] The effect of polaron in wurtzite GaN/AlxGa1-xN quantum well
Wurentuya
Duan, Xu-Lai
Zhao, Feng-Qi
Suriguga
Cailiao Kexue yu Gongyi/Material Science and Technology, 2012, 20 (02): : 133 - 139
[50] GaN quantum dots in AlxGa1-xN confined layer structures
Tanaka, S
Hirayama, H
Iwai, S
Aoyagi, Y
III-V NITRIDES, 1997, 449 : 135 - 140

← 1 2 3 4 5 →