Spontaneous polarization effects in GaN/AlxGa1-xN quantum wells

被引：50

作者：

Simon, J ^{[1
]}

Langer, R ^{[1
]}

Barski, A ^{[1
]}

Pelekanos, NT ^{[1
]}

机构：

[1] CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.61.7211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observe in GaN/AlxGa1-xN quantum wells with varying aluminum concentration strong electric fields whose amplitudes are significantly larger than those observed before in comparable structures fabricated at higher growth temperatures. We show that the measured fields are clearly stronger than what is expected based on piezoelectric effects alone, which constitutes a direct experimental proof of the existence of important spontaneous polarization effects in the GaN/AlxGa1-xN heterostructure system.

引用

页码：7211 / 7214

页数：4

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