1480nm InGaAsP LOC Broad-Area Laser Diodes

被引：0
|
作者：
Fendler, D. [1 ]
Moehrle, M. [1 ]
Spiegelberg, M. [1 ]
Rehbein, W. [1 ]
Grote, N. [1 ]
机构：
[1] Heinrich Hertz Inst Nachrichtentech Berlin GmbH, Fraunhofer Inst Telecommun, Berlin, Germany
来源：
PROCEEDINGS OF THE 2013 HIGH POWER DIODE LASERS AND SYSTEMS CONFERENCE (HPD) | 2013年
关键词：
High power; NIR; semiconductor laser; InGaAsP;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
1480nm InGaAsP large optical cavity broad-area laser diodes have been developed and optimized for pulsed and CW operation. The optical output powers at 20 degrees C are 18 W and 3.7 W, respectively. In accelerated ageing tests no noticeable degradation was observed.
引用
收藏
页码：12 / 13
页数：2
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