755-nm InGaAsP LASER DIODES

被引：0
|
作者：
Nomoto, E. [1 ]
Taniguchi, T. [1 ]
Ohtoshi, T. [1 ]
Funane, T. [2 ]
Saito, K. [3 ]
Sasaki, S. [3 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo, Japan
[2] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama, Japan
[3] Opnext Japan Inc, Device Business Unit, Komoro, Nagano, Japan
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
755-nm; laser; InGaAsP; AlGaInP; single mode; medical; biological;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 755-nm InGaAsP quantum-well laser on a GaAs substrate was fabricated. With AlGaInP cladding layers, the ridge-waveguide structure of the laser has an extremely high characteristic temperature of 213 K under ambient temperatures of 20 to 80 degrees C.
引用
收藏
页码：161 / +
页数：2
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