Preparation of iridium films by liquid source metalorganic chemical vapor deposition

被引：27
|
作者：
Dey, SK [1 ]
Goswami, J
Wang, CG
Majhi, P
机构：
[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期
关键词：
MOCVD; liquid source; thin film; iridium; metalorganic;
D O I：
10.1143/JJAP.38.L1052
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 degrees C from tetrahydrofuran (TNF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD =cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 degrees C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 mu Ohm cm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.
引用
收藏
页码：L1052 / L1054
页数：3
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