Preparation of iridium films by liquid source metalorganic chemical vapor deposition

被引：27
|
作者：
Dey, SK [1 ]
Goswami, J
Wang, CG
Majhi, P
机构：
[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA
[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 9AB期
关键词：
MOCVD; liquid source; thin film; iridium; metalorganic;
D O I：
10.1143/JJAP.38.L1052
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A potentially manufacturable liquid source metalorganic chemical vapor deposition process was successfully applied to deposit Iridium films on a variety of substrates. The depositions of Ir were carried out in the temperature range of 300-450 degrees C from tetrahydrofuran (TNF) solution of CH3CpIrCOD (Cp = cyclopentadienyl, COD =cyclooctadiene) in a low-pressure, hot-wall reactor. Oxygen assisted pyrolysis of the precursor at 350 degrees C resulted in a remarkably high Ir growth rate of 70 nm/min on IrOx/Si substrate. Additionally, Ir on Si exhibited a room-temperature resistivity of 10.2 mu Ohm cm. The as-deposited polycrystalline Ir films were highly reflecting, dense, and fine grained.
引用
收藏
页码：L1052 / L1054
页数：3
相关论文
共 50 条
  • [31] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF ORIENTED ZNO FILMS
    KAUFMANN, T
    FUCHS, G
    WEBERT, M
    CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (05) : 635 - 639
  • [32] Metalorganic chemical vapor deposition of PbTe films on GaAs substrates
    1600, (71):
  • [33] Preparation of ZnS:Tm films by metalorganic chemical vapor deposition using thulium β-diketonates as dopants
    Hara, Kazuhiko
    Tominaga, Satoshi
    Takano, Atsushi
    Dantani, Kyoji
    Yoshino, Junji
    Kukimoto, Hiroshi
    Japanese Journal of Applied Physics, Part 2: Letters, 1992, 31 (12 A):
  • [34] Ruthenium films prepared by liquid source metalorganic chemical vapor deposition using Ru(dpm)3 dissolved with tetrahydrofuran solvent
    Kadoshima, M
    Nabatame, T
    Hiratani, M
    Nakamura, Y
    Asano, I
    Suzuki, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (3B): : L347 - L350
  • [35] PREPARATION OF SRTIO3 THIN-FILMS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
    KOBAYASHI, I
    WAKAO, Y
    TOMINAGA, K
    OKADA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (08): : 4680 - 4683
  • [36] Isotopic study on metalorganic chemical vapor deposition of manganite films
    Nakamura, Toshihiro
    SURFACE & COATINGS TECHNOLOGY, 2013, 230 : 213 - 218
  • [37] Properties of ruthenium films prepared by liquid source metalorganic chemical vapor deposition using Ru(EtCp)2 with tetrahydrofuran solvent
    Nabatame, Toshihide
    Hiratani, Masahiko
    Kadoshima, Masaru
    Shimamoto, Yasuhiro
    Matsui, Yuichi
    Ohji, Yuzuru
    Asano, Isamu
    Fujiwara, Tetsuo
    Suzuki, Takaaki
    1600, JJAP, Tokyo (39):
  • [38] Properties of ruthenium films prepared by liquid source metalorganic chemical vapor deposition using Ru(EtCp)2 with tetrahydrofuran solvent
    Nabatame, T
    Hiratani, M
    Kadoshima, M
    Shimamoto, Y
    Matsui, Y
    Ohji, Y
    Asano, I
    Fujiwara, T
    Suzuki, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (11B): : L1188 - L1190
  • [39] Preparation of PbZrO3 thin films by plasma enhanced metalorganic chemical vapor deposition
    Lee, WG
    Woo, SI
    JOURNAL OF MATERIALS SCIENCE LETTERS, 2003, 22 (23) : 1677 - 1678
  • [40] Preparation of AIN: Mn films by metalorganic chemical vapor deposition for thin film electroluminescent devices
    Hara, K
    Sato, A
    Azumada, K
    Atsumori, T
    Shiratori, M
    5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2274 - 2277
12345