New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties

被引：2

作者：

Sergeeva, O. N. ^{[1
,2
]}

Solnyshkin, A. V. ^{[1
,2
]}

Kukushkin, S. A. ^{[2
,3
]}

Osipov, A. V. ^{[2
,3
]}

Sharofidinov, Sh. ^{[4
]}

Kaptelov, E. Yu. ^{[2
,4
]}

Senkevich, S. V. ^{[2
,4
]}

Pronin, I. P. ^{[2
,4
]}

机构：

[1] Tver State Univ, Dept Condensed Matter Phys, Tver, Russia

[2] Herzen State Pedag Univ Russia, Dept Phys, St Petersburg, Russia

[3] RAS, Inst Problems Mech Engn, Lab Struct & Phase Transit Condensed Matter, St Petersburg, Russia

[4] Ioffe Inst, Dept Phys Dielect & Semicond, St Petersburg, Russia

来源：

FERROELECTRICS | 2019年 / 544卷 / 01期

关键词：

Semipolar aluminum nitride; dielectric and pyroelectric properties;

D O I：

10.1080/00150193.2019.1598181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface topography, dielectric and pyroelectric properties of semipolar AlN thin films are studied. The growth of AlN was carried out by hydride-chloride vapor phase epitaxy on hybrid SiC layers specially prepared for the growth of semipolar AlN layers. SiC layers were grown on Si substrates of p-type (KDB) with (100)-orientation. The dynamic pyroelectric response of the AlN layer was observed. The pyroelectric current kinetics was analyzed in the frequency range of 10-1000 Hz, and the calculated pyroelectric coefficient was nearly equal to 9 center dot 10(-10) C/(cm(2)K).

引用

页码：33 / 37

页数：5

共 50 条

[41] Morphology and dielectric properties of reactively sputtered aluminium nitride thin films
Randolph, AG
Kurinec, SK
III-V NITRIDES, 1997, 449 : 295 - 300
[42] Effect of contact metals on the piezoelectric properties of aluminum nitride thin films
Harman, J.
Kabulski, A.
Pagan, V. R.
Famouri, P.
Kasarla, K. R.
Rodak, L. E.
Hensel, J. Peter
Korakakis, D.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2008, 26 (04): : 1417 - 1419
[43] Aluminum Nitride Thin Film Pyroelectric Detector Based on Metamaterial Absorber
Zhang, Congchun
Zhao, Yongmin
Han, Yulu
Ci, Guangteng
Yin, Lumeng
Zhao, Xiaoguang
Ming, Anjie
Wei, Feng
Mao, Changhui
25TH ANNUAL CONFERENCE & 14TH INTERNATIONAL CONFERENCE OF THE CHINESE SOCIETY OF MICRO-NANO TECHNOLOGY, CSMNT 2023, 2024, 2740
[44] Structure and dielectric properties of heteroepitaxial PMNT thin films
Wasa, K
Kanno, I
Seo, SH
Noh, DY
Okino, H
Yamamoto, T
INTEGRATED FERROELECTRICS, 2003, 55 : 781 - 793
[45] Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
Sowers, AT
Christman, JA
Bremser, MD
Ward, BL
Davis, RF
Nemanich, RJ
APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2289 - 2291
[46] Structure and dielectric properties of heteroepitaxial PMNT thin films
Wasa, K
Kanno, I
Seo, S
Noh, D
Matsunaga, T
Okino, H
Yamamoto, T
FERROELECTRICS, 2005, 328 : 69 - 77
[47] PYROELECTRIC PROPERTIES OF PLT THIN-FILMS
LIU, WG
LIU, Y
ZHANG, LY
YAO, X
FERROELECTRICS LETTERS SECTION, 1995, 19 (3-4) : 107 - 112
[48] Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
Appl Phys Lett, 16 (2289):
[49] Growth and properties of Indium nitride thin films and InN nanostructures
Briot, O
Ruffenach, S
Gil, B
2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, : 839 - 840
[50] Structure and pyroelectric properties of vacuum deposited thin films of alkali metal stearates
Borovikov, AY
Levash, LV
Naumovets, AG
Puchkovskaya, GA
Samoilov, VB
Styopkin, VI
FERROELECTRICS, 1997, 192 (1-4) : 323 - 328

← 1 2 3 4 5 →