New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties

被引：2

作者：

Sergeeva, O. N. ^{[1
,2
]}

Solnyshkin, A. V. ^{[1
,2
]}

Kukushkin, S. A. ^{[2
,3
]}

Osipov, A. V. ^{[2
,3
]}

Sharofidinov, Sh. ^{[4
]}

Kaptelov, E. Yu. ^{[2
,4
]}

Senkevich, S. V. ^{[2
,4
]}

Pronin, I. P. ^{[2
,4
]}

机构：

[1] Tver State Univ, Dept Condensed Matter Phys, Tver, Russia

[2] Herzen State Pedag Univ Russia, Dept Phys, St Petersburg, Russia

[3] RAS, Inst Problems Mech Engn, Lab Struct & Phase Transit Condensed Matter, St Petersburg, Russia

[4] Ioffe Inst, Dept Phys Dielect & Semicond, St Petersburg, Russia

来源：

FERROELECTRICS | 2019年 / 544卷 / 01期

关键词：

Semipolar aluminum nitride; dielectric and pyroelectric properties;

D O I：

10.1080/00150193.2019.1598181

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Surface topography, dielectric and pyroelectric properties of semipolar AlN thin films are studied. The growth of AlN was carried out by hydride-chloride vapor phase epitaxy on hybrid SiC layers specially prepared for the growth of semipolar AlN layers. SiC layers were grown on Si substrates of p-type (KDB) with (100)-orientation. The dynamic pyroelectric response of the AlN layer was observed. The pyroelectric current kinetics was analyzed in the frequency range of 10-1000 Hz, and the calculated pyroelectric coefficient was nearly equal to 9 center dot 10(-10) C/(cm(2)K).

引用

页码：33 / 37

页数：5

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