New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties

被引：2
|
作者：
Sergeeva, O. N. [1 ,2 ]
Solnyshkin, A. V. [1 ,2 ]
Kukushkin, S. A. [2 ,3 ]
Osipov, A. V. [2 ,3 ]
Sharofidinov, Sh. [4 ]
Kaptelov, E. Yu. [2 ,4 ]
Senkevich, S. V. [2 ,4 ]
Pronin, I. P. [2 ,4 ]
机构：
[1] Tver State Univ, Dept Condensed Matter Phys, Tver, Russia
[2] Herzen State Pedag Univ Russia, Dept Phys, St Petersburg, Russia
[3] RAS, Inst Problems Mech Engn, Lab Struct & Phase Transit Condensed Matter, St Petersburg, Russia
[4] Ioffe Inst, Dept Phys Dielect & Semicond, St Petersburg, Russia
来源：
FERROELECTRICS | 2019年 / 544卷 / 01期
关键词：
Semipolar aluminum nitride; dielectric and pyroelectric properties;
D O I：
10.1080/00150193.2019.1598181
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Surface topography, dielectric and pyroelectric properties of semipolar AlN thin films are studied. The growth of AlN was carried out by hydride-chloride vapor phase epitaxy on hybrid SiC layers specially prepared for the growth of semipolar AlN layers. SiC layers were grown on Si substrates of p-type (KDB) with (100)-orientation. The dynamic pyroelectric response of the AlN layer was observed. The pyroelectric current kinetics was analyzed in the frequency range of 10-1000 Hz, and the calculated pyroelectric coefficient was nearly equal to 9 center dot 10(-10) C/(cm(2)K).
引用
收藏
页码：33 / 37
页数：5
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