Domain structures in epitaxial Pb(Zr0.68,Ti0.32)O3 thin films

被引:12
|
作者
Saito, K
Oikawa, T
Yamaji, I
Akai, T
Funakubo, H
机构
[1] Philips Japan, Sagamihara, Kanagawa 2280803, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
关键词
high resolution X-ray diffraction; metalorganic chemical vapor deposition; oxides; ferroelectric materials;
D O I
10.1016/S0022-0248(01)01981-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Domain structures and their volume fraction in (001)-, (101)- and (111)-oriented epitaxial Pb(Zr0.6Ti0.4)O-3 (PZT) films grown on (001), (110) and (111) SrTiO3 (STO) single crystal substrates, respectively, were characterized by using a high-resolution X-ray diffraction reciprocal space mapping (RSM) technique. The results of RSM revealed the presence of (10 (1) over bar) and (11 (1) over bar) orientation as well as (110) and (111) orientations for the films grown on (110) and (111) STO substrates, respectively, although (001)-oriented film had (001)-oriented simple domain structure. These multiple domain configurations seemed to be introduced by {100} and {101} twin domain boundaries. The RSM analysis also showed that the relative volume fractions of (10 (1) over bar) and (11 (1) over bar) orientations were 22% and 52% against (110) and (111) orientations, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:464 / 467
页数:4
相关论文
共 50 条
  • [31] EPITAXIAL-GROWTH OF FERROELECTRIC PLZT [(PB,LA)(ZR,TI)O3] THIN-FILMS
    ISHIDA, M
    TSUJI, S
    KIMURA, K
    MATSUNAMI, H
    TANAKA, T
    JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 393 - 398
  • [32] Electrical properties of highly strained epitaxial Pb(Zr,Ti)O3 thin films on MgO(100)
    Okino, Hirotake
    Nishikawa, Tomoki
    Shimizu, Masaru
    Horiuchi, Toshihisa
    Matsushige, Kazumi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (9 B): : 5388 - 5391
  • [33] Ferroelectric properties of epitaxial Pb(Zr, Ti)O3 thin films on silicon by control of crystal orientation
    Dekkers, Matthijn
    Nguyen, Minh D.
    Steenwelle, Ruud
    Riele, Paul M. te
    Blank, Dave H. A.
    Rijnders, Guus
    APPLIED PHYSICS LETTERS, 2009, 95 (01)
  • [34] Investigation of the Polarization Dependence of the Transient Current in Polycrystalline and Epitaxial Pb(Zr, Ti)O3 Thin Films
    Delimova, L. A.
    Gushchina, E. V.
    Yuferev, V. S.
    Grekhov, I. V.
    PHYSICS OF THE SOLID STATE, 2014, 56 (12) : 2451 - 2460
  • [35] Polarization correlation and pyroelectric properties of Pb(Zr, Ti)O3 and La doped Pb(Zr, Ti)O3 multilayer thin films
    Liu, WG
    Jiang, B
    Ko, JS
    Tan, OK
    Zhu, WG
    INTEGRATED FERROELECTRICS, 2001, 35 (1-4) : 1777 - 1784
  • [36] Quantitative Analysis of the Nucleation and Growth of Ferroelectric Domains in Epitaxial Pb(Zr,Ti)O3 Thin Films
    Yang, S. M.
    Heo, J. W.
    Lee, H. N.
    Song, T. K.
    Yoon, J. -G.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2009, 55 (02) : 820 - 824
  • [37] Investigation of the polarization dependence of the transient current in polycrystalline and epitaxial Pb(Zr,Ti)O3 thin films
    L. A. Delimova
    E. V. Gushchina
    V. S. Yuferev
    I. V. Grekhov
    Physics of the Solid State, 2014, 56 : 2451 - 2460
  • [38] Phase transition in ferroelectric Pb(Zr0.52Ti0.48)O3 epitaxial thin films
    Liu, Q.
    Marconot, O.
    Piquemal, M.
    Eypert, C.
    Borowiak, A. S.
    Baboux, N.
    Gautier, B.
    Benamrouche, A.
    Rojo-Romeo, P.
    Robach, Y.
    Penuelas, J.
    Vilquin, B.
    THIN SOLID FILMS, 2014, 553 : 85 - 88
  • [39] Electrical properties of highly strained epitaxial Pb(Zr,Ti)O3 thin films on MgO(100)
    Okino, H
    Nishikawa, T
    Shimizu, M
    Horiuchi, T
    Matsushige, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9B): : 5388 - 5391
  • [40] Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties
    Mtebwa, M.
    Mazzalai, A.
    Sandu, C. S.
    Crassous, A.
    Setter, N.
    AIP ADVANCES, 2016, 6 (05)