Domain structures in epitaxial Pb(Zr0.68,Ti0.32)O3 thin films

被引:12
|
作者
Saito, K
Oikawa, T
Yamaji, I
Akai, T
Funakubo, H
机构
[1] Philips Japan, Sagamihara, Kanagawa 2280803, Japan
[2] Tokyo Inst Technol, Interdisciplinary Grad Sch, Dept Innovat & Engineered Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
关键词
high resolution X-ray diffraction; metalorganic chemical vapor deposition; oxides; ferroelectric materials;
D O I
10.1016/S0022-0248(01)01981-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Domain structures and their volume fraction in (001)-, (101)- and (111)-oriented epitaxial Pb(Zr0.6Ti0.4)O-3 (PZT) films grown on (001), (110) and (111) SrTiO3 (STO) single crystal substrates, respectively, were characterized by using a high-resolution X-ray diffraction reciprocal space mapping (RSM) technique. The results of RSM revealed the presence of (10 (1) over bar) and (11 (1) over bar) orientation as well as (110) and (111) orientations for the films grown on (110) and (111) STO substrates, respectively, although (001)-oriented film had (001)-oriented simple domain structure. These multiple domain configurations seemed to be introduced by {100} and {101} twin domain boundaries. The RSM analysis also showed that the relative volume fractions of (10 (1) over bar) and (11 (1) over bar) orientations were 22% and 52% against (110) and (111) orientations, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:464 / 467
页数:4
相关论文
共 50 条
  • [21] Polarization suppression in Pb(Zr,Ti)O3 thin films
    1600, American Inst of Physics, Woodbury, NY, USA (77):
  • [22] Texture control of Pb(Zr,Ti)O3 thin films
    Torii, K
    Matsui, Y
    Fujisaki, Y
    INTEGRATED FERROELECTRICS, 1999, 25 (1-4) : 563 - 573
  • [23] Growth of epitaxial Pb(Zr,Ti)O3 films on Ba(Zr,Ti)O3 single crystals by hydrothermal synthesis
    Choi, K
    Choi, J
    Choi, ES
    Lee, HY
    Chung, SY
    CHEMISTRY OF MATERIALS, 2005, 17 (11) : 2796 - 2798
  • [24] Nanoscale control of ferroelectric polarization and domain size in epitaxial Pb(Zr0.2Ti0.8)O3 thin films
    Paruch, P
    Tybell, T
    Triscone, JM
    APPLIED PHYSICS LETTERS, 2001, 79 (04) : 530 - 532
  • [25] Domain structures in Pb(Zr,Ti)O-3 and PbTiO3 thin films
    Madsen, LD
    Griswold, EM
    Weaver, L
    JOURNAL OF MATERIALS RESEARCH, 1997, 12 (10) : 2612 - 2616
  • [26] Observation of inhomogeneous domain nucleation in epitaxial Pb(Zr,Ti)O3 capacitors
    Kim, D. J.
    Jo, J. Y.
    Kim, T. H.
    Yang, S. M.
    Chen, B.
    Kim, Y. S.
    Noh, T. W.
    APPLIED PHYSICS LETTERS, 2007, 91 (13)
  • [27] Fabrication and characterization of (111)-epitaxial Pb(Zr0.35Ti0.65)O3/Pb(Zr0.65Ti0.35)O3 artificial superlattice thin films
    Yamada, Tomoaki
    Ebihara, Youhei
    Kiguchi, Takanori
    Sakata, Osami
    Morioka, Hitoshi
    Shimizu, Takao
    Funakubo, Hiroshi
    Konno, Toyohiko J.
    Yoshino, Masahito
    Nagasaki, Takanori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (10)
  • [28] Comparison of ferroelectric domain assemblages in Pb(Zr,Ti)O3 thin films and bulk ceramics
    Tuttle, B
    Headley, T
    Drewien, C
    Michael, J
    Voigt, J
    Garino, T
    FERROELECTRICS, 1999, 221 (1-4) : 209 - 218
  • [29] Tetragonal distortion and the domain structure of thin Pb (Zr,Ti)O3 /MgO(100) films
    Noh, DY
    Kang, HC
    Seong, TY
    Je, JH
    Kim, HK
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 67 (03): : 343 - 346
  • [30] Tetragonal distortion and the domain structure of thin Pb(Zr,Ti)O3/MgO(100) films
    D.Y. Noh
    H.C. Kang
    T.Y. Seong
    J.H. Je
    H.K. Kim
    Applied Physics A, 1998, 67 : 343 - 346