Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

被引：10

作者：

Jiang, Jie'an ^{[1
,2
,3
]}

Xu, Houqiang ^{[2
,3
]}

Sheikhi, Moheb ^{[2
,3
]}

Li, Liang ^{[2
,3
,4
]}

Yang, Zhenhai ^{[2
,5
]}

Hoo, Jason ^{[6
]}

Guo, Shiping ^{[6
]}

Zeng, Yuheng ^{[2
]}

Guo, Wei ^{[2
]}

Ye, Jichun ^{[2
,3
]}

机构：

[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China

[5] Univ Nottingham Ningbo China, Fac Sci & Engn, Dept Elect & Elect Engn, Ningbo 315100, Zhejiang, Peoples R China

[6] Adv Ficrofabricat Equipment Inc, Shanghai 201201, Peoples R China

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 11期

基金：

中国国家自然科学基金;

关键词：

STRESS;

D O I：

10.1364/OE.27.016195

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality: and lasing behavior of the GaN microdisks was also demonstrated. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：16195 / 16205

页数：11

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