Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate

被引：10
|
作者：
Jiang, Jie'an [1 ,2 ,3 ]
Xu, Houqiang [2 ,3 ]
Sheikhi, Moheb [2 ,3 ]
Li, Liang [2 ,3 ,4 ]
Yang, Zhenhai [2 ,5 ]
Hoo, Jason [6 ]
Guo, Shiping [6 ]
Zeng, Yuheng [2 ]
Guo, Wei [2 ]
Ye, Jichun [2 ,3 ]
机构：
[1] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China
[2] Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[4] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China
[5] Univ Nottingham Ningbo China, Fac Sci & Engn, Dept Elect & Elect Engn, Ningbo 315100, Zhejiang, Peoples R China
[6] Adv Ficrofabricat Equipment Inc, Shanghai 201201, Peoples R China
来源：
OPTICS EXPRESS | 2019年 / 27卷 / 11期
基金：
中国国家自然科学基金;
关键词：
STRESS;
D O I：
10.1364/OE.27.016195
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality: and lasing behavior of the GaN microdisks was also demonstrated. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：16195 / 16205
页数：11
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