Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

被引：54
|
作者：
Duan, J. [1 ]
Huang, H. [1 ]
Lu, Z. G. [2 ]
Poole, P. J. [2 ]
Wang, C. [3 ]
Grillot, F. [1 ,4 ]
机构：
[1] Univ Paris Saclay, Telecom ParisTech, LTCI, 46 Rue Barrault, F-75013 Paris, France
[2] NRC Canada, Adv Elect & Photon Res Ctr, 1200 Montreal Rd, Ottawa, ON K1A 0R6, Canada
[3] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
[4] Univ New Mexico, Ctr High Technol Mat, 1313 Goddard SE, Albuquerque, NM 87106 USA
来源：
APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 12期
关键词：
SEMICONDUCTOR-LASERS; MU-M; RESONATORS; CHIRP;
D O I：
10.1063/1.5022480
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports on the spectral linewidth of InAs/InP quantum dot distributed feedback lasers. Owing to a low inversion factor and a low linewidth enhancement factor, a narrow spectral linewidth of 160 kHz (80 kHz intrinsic linewidth) with a low sensitivity to temperature is demonstrated. When using anti-reflection coatings on both facets, narrow linewidth operation is extended to high powers, believed to be due to a reduction in the longitudinal spatial hole burning. These results confirm the high potential of quantum dot lasers for increasing transmission capacity in future coherent communication systems. Published by AIP Publishing.
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页数：5
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