Narrow spectral linewidth in InAs/InP quantum dot distributed feedback lasers

被引：54

作者：

Duan, J. ^{[1
]}

Huang, H. ^{[1
]}

Lu, Z. G. ^{[2
]}

Poole, P. J. ^{[2
]}

Wang, C. ^{[3
]}

Grillot, F. ^{[1
,4
]}

机构：

[1] Univ Paris Saclay, Telecom ParisTech, LTCI, 46 Rue Barrault, F-75013 Paris, France

[2] NRC Canada, Adv Elect & Photon Res Ctr, 1200 Montreal Rd, Ottawa, ON K1A 0R6, Canada

[3] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

[4] Univ New Mexico, Ctr High Technol Mat, 1313 Goddard SE, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 12期

关键词：

SEMICONDUCTOR-LASERS; MU-M; RESONATORS; CHIRP;

D O I：

10.1063/1.5022480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This paper reports on the spectral linewidth of InAs/InP quantum dot distributed feedback lasers. Owing to a low inversion factor and a low linewidth enhancement factor, a narrow spectral linewidth of 160 kHz (80 kHz intrinsic linewidth) with a low sensitivity to temperature is demonstrated. When using anti-reflection coatings on both facets, narrow linewidth operation is extended to high powers, believed to be due to a reduction in the longitudinal spatial hole burning. These results confirm the high potential of quantum dot lasers for increasing transmission capacity in future coherent communication systems. Published by AIP Publishing.

引用

页数：5

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