Substrate Dependent Growth of Microcrystalline Silicon

被引:0
|
作者
Bailly, Mark [1 ]
Carpenter, Joe V., III [1 ]
Holman, Zachary [1 ]
Bowden, Stuart [1 ]
机构
[1] Arizona State Univ, Ira A Fulton Sch Engn, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
来源
2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年
关键词
amorphous materials; heterojunction; microcrystals; photovoltaic cells; silicon; substrates; FILMS;
D O I
暂无
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Silicon (Si) heterojunction solar cells with efficiencies approaching 24.7% are poised to replace Si diffused junction solar cells. To further improve their efficiency, microcrystalline Si (uc-Si) could replace the amorphous Si (a-Si) emitter layer, thus improving the effective doping and increasing transparency. This improvement in efficiency would come at little additional cost and could be accomplished by altering the plasma-enhanced chemical vapor deposition (PECVD) conditions. A uc-Si film was deposited on glass, a-Si, c-Si, silicon dioxide, and sapphire. When integrated over the AM 1.5G spectrum, the a-Si:H film absorbs 3 mA/cm(2) the 50% crystalline uc-Si:H film absorbs 1.7 mA/cm(2).
引用
收藏
页码:1201 / 1205
页数:5
相关论文
共 50 条
  • [31] Substrate holder biasing for improvement of microcrystalline silicon deposition process
    Zhang, X. D.
    Zhang, F. R.
    Amanatides, E.
    Mataras, D.
    Xiong, S. Z.
    Zhao, Y.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) : 2208 - 2213
  • [32] Growth mechanism of microcrystalline silicon deposited by ECRCVD
    Beckers, I
    Conrad, E
    Muller, P
    Nickel, NH
    Sieber, I
    Fuhs, W
    ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 773 - 778
  • [33] Influence of Boron doping on microcrystalline silicon growth
    李新利
    陈永生
    杨仕娥
    谷锦华
    卢景霄
    郜小勇
    李瑞
    焦岳超
    高海波
    王果
    Chinese Physics B, 2011, 20 (09) : 325 - 330
  • [34] Influence of Boron doping on microcrystalline silicon growth
    Li Xin-Li
    Chen Yong-Sheng
    Yang Shi-E
    Gu Jin-Hua
    Lu Jing-Xiao
    Gao Xiao-Yong
    Li Rui
    Jiao Yue-Chao
    Gao Hai-Bo
    Wang Guo
    CHINESE PHYSICS B, 2011, 20 (09)
  • [35] Simulation of the growth dynamics of amorphous and microcrystalline silicon
    Bailat, J
    Vallat-Sauvain, E
    Vallat, A
    Shah, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 32 - 36
  • [36] Microcrystalline silicon. Growth and device application
    Matsuda, A
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2004, 338 : 1 - 12
  • [37] Role of substrate temperature on the properties of microcrystalline silicon thin films
    Mukhopadhyay, S
    Saha, SC
    Ray, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (11): : 6284 - 6289
  • [38] Initial stages of microcrystalline silicon film growth
    Koynov, S
    Grebner, S
    Radojkovic, P
    Hartmann, E
    Schwarz, R
    Vasilev, L
    Krankenhagen, R
    Sieber, I
    Henrion, W
    Schmidt, M
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 198 : 1012 - 1016
  • [39] Growth of crystalline grains in microcrystalline silicon films
    Lee, Gyu-Hyun
    Yoon, Jong-Hwan
    PHYSICAL REVIEW B, 2006, 73 (19):
  • [40] Growth and properties of microcrystalline silicon thin films
    Zhang, X. (xdzhang@nankai.edu.cn), 2005, Science Press (25):