Substrate Dependent Growth of Microcrystalline Silicon

被引：0

作者：

Bailly, Mark ^{[1
]}

Carpenter, Joe V., III ^{[1
]}

Holman, Zachary ^{[1
]}

Bowden, Stuart ^{[1
]}

机构：

[1] Arizona State Univ, Ira A Fulton Sch Engn, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

amorphous materials; heterojunction; microcrystals; photovoltaic cells; silicon; substrates; FILMS;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Silicon (Si) heterojunction solar cells with efficiencies approaching 24.7% are poised to replace Si diffused junction solar cells. To further improve their efficiency, microcrystalline Si (uc-Si) could replace the amorphous Si (a-Si) emitter layer, thus improving the effective doping and increasing transparency. This improvement in efficiency would come at little additional cost and could be accomplished by altering the plasma-enhanced chemical vapor deposition (PECVD) conditions. A uc-Si film was deposited on glass, a-Si, c-Si, silicon dioxide, and sapphire. When integrated over the AM 1.5G spectrum, the a-Si:H film absorbs 3 mA/cm(2) the 50% crystalline uc-Si:H film absorbs 1.7 mA/cm(2).

引用

页码：1201 / 1205

页数：5

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