Synthesis of ZnO Nanocrystals in SiO2/Si Track Template: Effect of Electrodeposition Parameters on Structure

被引:14
|
作者
Dauletbekova, Alma [1 ]
Vlasukova, Liudmila [2 ]
Baimukhanov, Zein [1 ]
Akilbekov, Abdirash [1 ]
Kozlovskyi, Artem [3 ]
Giniyatova, Sholpan [1 ]
Seitbayev, Aibek [1 ,3 ]
Usseinov, Abai [1 ]
Akylbekova, Aiman [1 ]
机构
[1] LN Gumilyov Eurasian Natl Univ, 2 Satpayev Str, Astana 010008, Kazakhstan
[2] Belarusian State Univ, Sci Res Lab Mat & Device Struct, Kurchatov Str 1, Minsk 220064, BELARUS
[3] Inst Nucl Phys, Astana Branch, Abylaikhan Ave 1-2, Astana 01008, Kazakhstan
来源
关键词
electrochemical deposition; SiO2; Si; swift heavy ion irradiation; track template; zinc oxide nanocrystals; ION TRACKS; NANOWIRES; METAL; NANOSTRUCTURES; GROWTH;
D O I
10.1002/pssb.201800408
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This paper presents a study of nanoclusters obtained by electrochemical deposition (ECD) of zinc in the a-SiO2/Si-n track template. The nanoporous SiO2 layer on Si substrate (track template) has been created by irradiation with swift Xe ions and further etching in HF solution. The morphology of SiO2/Si-n track templates and precipitated Zn-based clusters are examined using a scanning electron microscope JSM 7500F. The crystallographic structure of the Zn-based precipitates was investigated by means of X-ray diffraction (XRD). X-ray analysis is carried out on a D8 ADVANCE ECO X-ray diffractometer. The Bruker AXSDIFFRAC.EVAv.4.2 software and the international ICDD PDF-2 database are used to identify the phases and study the crystal structure. From XRD data, it has been found the formation of three crystalline phases of zinc oxide nanocrystals electro-deposited into SiO2/Si track template: wurtzite, sphalerite, and rock salt structures. Wurtzite is obtained on an amorphous surface of silicon dioxide. Possible mechanisms of ZnO formation instead of metal Zn nanocrystals are discussed.
引用
收藏
页数:6
相关论文
共 50 条
  • [41] Photoluminescence Excitation Spectroscopy of Si Nanocrystals in SiO2
    de Boer, W. D. A. M.
    Timmerman, D.
    Roldan Gutierrez, M. A.
    Molina, S. I.
    Gregorkiewicz, T.
    NANOSCALE LUMINESCENT MATERIALS 2, 2012, 45 (05): : 3 - 8
  • [42] The energy band alignment of Si nanocrystals in SiO2
    Seguini, G.
    Schamm-Chardon, S.
    Pellegrino, P.
    Perego, M.
    APPLIED PHYSICS LETTERS, 2011, 99 (08)
  • [43] Nucleation of SiC nanocrystals at the Si/SiO2 interface:: Effect of the interface properties
    Pongrácz, A
    Battistig, G
    Tóth, AL
    Makkai, Z
    Dücsö, C
    Josepovits, KV
    Bársony, I
    JOURNAL DE PHYSIQUE IV, 2006, 132 : 133 - 136
  • [44] The effect of implantation of P ions on the photoluminescence of Si nanocrystals in SiO2 layers
    Kachurin, GA
    Yanovskaya, SG
    Tetelbaum, DI
    Mikhailov, AN
    SEMICONDUCTORS, 2003, 37 (06) : 713 - 717
  • [45] The effect of ion-irradiation and annealing on the luminescence of Si nanocrystals in SiO2
    Cheylan, S
    Langford, N
    Elliman, RG
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 166 : 851 - 856
  • [46] Effect of annealing and H-2 passivation on the photoluminescence of Si nanocrystals in SiO2
    Neufeld, E
    Wang, S
    Apetz, R
    Buchal, C
    Carius, R
    White, CW
    Thomas, DK
    THIN SOLID FILMS, 1997, 294 (1-2) : 238 - 241
  • [47] Depth profiling of charging effect of Si nanocrystals embedded in SiO2:: A study of charge diffusion among Si nanocrystals
    Liu, Y.
    Chen, T. P.
    Ng, C. Y.
    Ding, L.
    Zhang, S.
    Fu, Y. Q.
    Fung, S.
    JOURNAL OF PHYSICAL CHEMISTRY B, 2006, 110 (33): : 16499 - 16502
  • [48] Ion Track Structure and Dynamics in SiO2
    Murat, M.
    Akkerman, A.
    Barak, J.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (04) : 2113 - 2120
  • [49] Ion Track Structure and Dynamics in SiO2
    Murat, M.
    Akkerman, A.
    Barak, J.
    RADECS 2007: PROCEEDINGS OF THE 9TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 2007, : 287 - 295
  • [50] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
    Ming, Z
    Nakajima, K
    Suzuki, M
    Kimura, K
    Uematsu, M
    Torii, K
    Kamiyama, S
    Nara, Y
    Yamada, K
    APPLIED PHYSICS LETTERS, 2006, 88 (15)