Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

被引：9
|
作者：
Wang, Zhichong [1 ,2 ]
Zhang, Xiangpeng [1 ,2 ]
Zeng, Zhigang [1 ,2 ]
Zhang, Ziqiang [2 ,3 ]
Hu, Zhiyu [1 ,2 ,4 ]
机构：
[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
[2] Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China
[3] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
[4] Shanghai Jiao Tong Univ, Res Inst Micronano Sci & Technol, Shanghai 200240, Peoples R China
来源：
ECS SOLID STATE LETTERS | 2014年 / 3卷 / 08期
基金：
中国国家自然科学基金;
关键词：
BI/BISB SUPERLATTICE NANOWIRES; SOLVOTHERMAL SYNTHESIS; NANOSHEETS; PERFORMANCE; MERIT;
D O I：
10.1149/2.0041408ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi2Te3 thin film composed of single-crystal nanoplates was fabricated on Si substrate by a modified two-step molecular beam epitaxy (MBE) method. The possible growth mechanism was suggested based on the scanning electron microscopy observations. Its thermoelectric properties were obtained at room-temperature with electrical conductivity (313.07 S center dot cm(-1)) and Seebeck coefficient (-163.44 mu V center dot K-1) respectively enhanced by 74.80% and 71.70% than the reference sample prepared by ordinary MBE method. (C) 2014 The Electrochemical Society. [DOI: 10.1149/2.0041408ssl] All rights reserved.
引用
收藏
页码：P99 / P101
页数：3
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