Two-Step Molecular Beam Epitaxy Growth of Bismuth Telluride Nanoplate Thin Film with Enhanced Thermoelectric Properties

被引：9

作者：

Wang, Zhichong ^{[1
,2
]}

Zhang, Xiangpeng ^{[1
,2
]}

Zeng, Zhigang ^{[1
,2
]}

Zhang, Ziqiang ^{[2
,3
]}

Hu, Zhiyu ^{[1
,2
,4
]}

机构：

[1] Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China

[2] Shanghai Univ, Inst NanoMicroEnergy, Shanghai 200444, Peoples R China

[3] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China

[4] Shanghai Jiao Tong Univ, Res Inst Micronano Sci & Technol, Shanghai 200240, Peoples R China

来源：

ECS SOLID STATE LETTERS | 2014年 / 3卷 / 08期

基金：

中国国家自然科学基金;

关键词：

BI/BISB SUPERLATTICE NANOWIRES; SOLVOTHERMAL SYNTHESIS; NANOSHEETS; PERFORMANCE; MERIT;

D O I：

10.1149/2.0041408ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2Te3 thin film composed of single-crystal nanoplates was fabricated on Si substrate by a modified two-step molecular beam epitaxy (MBE) method. The possible growth mechanism was suggested based on the scanning electron microscopy observations. Its thermoelectric properties were obtained at room-temperature with electrical conductivity (313.07 S center dot cm(-1)) and Seebeck coefficient (-163.44 mu V center dot K-1) respectively enhanced by 74.80% and 71.70% than the reference sample prepared by ordinary MBE method. (C) 2014 The Electrochemical Society. [DOI: 10.1149/2.0041408ssl] All rights reserved.

引用

页码：P99 / P101

页数：3

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