Modeling Techniques and Virtual Prototyping of Silicon Carbide MOSFET and IGBT Power Modules

被引:0
|
作者
Bazzano, Gaetano [1 ]
Cavallaro, Daniela [1 ]
Raffa, Alessandra [1 ]
Di Giovanni, Filippo [1 ]
Manzitto, Alessandra [1 ]
Cascio, Alessandra [1 ]
机构
[1] STMicroelectronics, Catania, Italy
关键词
SiC; Power Modules; SPICE model; Finite Element Model (FEM) model; methodology; thermal analysis; electronic design automation (EDA)/computer-aided design (CAD) methodologies; Electric Vehicles (EV);
D O I
暂无
中图分类号
P75 [海洋工程];
学科分类号
0814 ; 081505 ; 0824 ; 082401 ;
摘要
In the fast-growing market of electric vehicles, power modules, used as switching elements for the main traction inverter feeding the electrical motor, are playing a key role. In this context a robust and reliable methodology has to be developed to assess the power modules' electro-thermal behaviour at the early design stage. The final goal of this paper is to describe this methodology, developed by using Finite Element Analysis (FEA) and SPICE circuit simulations, to help define a more robust solution and to verify compliance with the mission profile at hand.
引用
收藏
页码:371 / 376
页数:6
相关论文
共 50 条
  • [41] Electro-Thermal Simulation of Silicon Carbide Power Modules
    Akturk, A.
    Goldsman, N.
    Potbhare, S.
    2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2014, : 237 - 240
  • [42] Comparative Study on Power Cycling Capabilities of SiC Power MOSFET and Si IGBT Baseplate-less Power Modules
    Kovacevic-Badstuebner, Ivana
    Mengotti, Elena
    Natzke, Philipp
    Bianda, Enea
    Race, Salvatore
    Schuepbach, Matthias
    Kenel, Christoph
    Musella, Denis
    Jormanainen, Joni
    Grossner, Ulrike
    2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 518 - 521
  • [43] Driving a Silicon Carbide Power MOSFET with a fast Short Circuit Protection
    Wang, Heng
    Zhao, Jia
    Zheng, Ziqing
    Sun, Huibo
    2018 1ST WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA), 2018, : 260 - +
  • [44] Static Behavior Analysis of Silicon Carbide Power MOSFET for Temperature Variations
    Jouha, Wadia
    Dherbecourt, Pascal
    Joubert, Eric
    El Oualkadi, Ahmed
    2016 INTERNATIONAL CONFERENCE ON ELECTRICAL AND INFORMATION TECHNOLOGIES (ICEIT), 2016, : 276 - 280
  • [45] A Physics-Based Modeling of Interelectrode MOS Capacitances of Power MOSFET and IGBT
    Rael, Stephane
    Davat, Bemard
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2008, 23 (05) : 2585 - 2594
  • [46] Modeling and Simulation of Silicon Carbide Power Systems
    Goldsman, N.
    Potbhare, S.
    Akturk, A.
    Salemi, S.
    Lelis, A.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, 41 (08): : 177 - 181
  • [47] 100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules
    Losee, P.
    Matocha, K.
    Arthur, S.
    Delgado, E.
    Beaupre, R.
    Pautsch, A.
    Rao, R.
    Nasadoski, J.
    Garrett, J.
    Stum, Z.
    Stevanovic, L.
    Conte, R.
    Monaghan, K.
    SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 899 - 902
  • [48] Gate Driver Design for a High Power Density EV/HEV Traction Drive Using Silicon Carbide MOSFET Six-Pack Power Modules
    Gao, Rui
    Yang, Li
    Yu, Wensong
    Husain, Iqbal
    2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 2546 - 2551
  • [49] Comparative Assessment of 3.3kV/400A SiC MOSFET and Si IGBT Power Modules
    Ionita, Claudiu
    Nawaz, Muhammad
    Ilves, Kalle
    Iannuzzo, Francesco
    2017 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2017, : 1343 - 1349
  • [50] Application Study of the Benefits for Using Silicon-Carbide Versus Silicon in Power Modules
    Wood, Robert A.
    Salem, Thomas E.
    2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2012, : 2499 - 2505