100 Amp, 1000 Volt Class 4H-Silicon Carbide MOSFET Modules

被引：4

作者：

Losee, P. ^{[1
]}

Matocha, K. ^{[1
]}

Arthur, S. ^{[1
]}

Delgado, E. ^{[1
]}

Beaupre, R. ^{[1
]}

Pautsch, A. ^{[1
]}

Rao, R. ^{[1
]}

Nasadoski, J. ^{[1
]}

Garrett, J. ^{[1
]}

Stum, Z. ^{[1
]}

Stevanovic, L. ^{[1
]}

Conte, R. ^{[2
]}

Monaghan, K. ^{[2
]}

机构：

[1] Gen Elect Global Res Ctr, Niskayuna, NY USA

[2] Sensitron Semicond, Deer Pk, NY USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

4H-SiC DMOSFET; power switching; power module;

D O I：

10.4028/www.scientific.net/MSF.615-617.899

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of large area, up to 70m Omega/IkV (0.45cm x 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm x 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature Lip to T=200 degrees C of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.

引用

页码：899 / 902

页数：4

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