TEM study of defects generated in 4H-SiC by microindentations on the prismatic plane

被引：9
|
作者：
Mussi, A. [1 ]
Demenet, J. L. [1 ]
Rabier, J. [1 ]
机构：
[1] Univ Poitiers, SP2MI, CNRS,UMR 6630, Met Phys Lab, F-86962 Futuroscope, France
来源：
PHILOSOPHICAL MAGAZINE LETTERS | 2006年 / 86卷 / 09期
关键词：
D O I：
10.1080/09500830600930198
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The deformation microstructure of single crystals of 4H-SiC resulting from microindentations on a prismatic surface was investigated by TEM. Indentations were performed at 400 and 675 degrees C, i.e. below the brittle to ductile transition temperature of 4H-SiC ( temperature close to 1100 degrees C). TEM analysis reveals dissociated dislocations as well as extended stacking faults in the basal plane. In addition, perfect edge dislocations are observed on prismatic planes. From the observations, it is assumed that perfect dislocations are nucleated in the prismatic plane and cross-slip on the basal one where they dissociate.
引用
收藏
页码：561 / 568
页数：8
相关论文
共 50 条
  • [21] Research on the intrinsic defects of VSi in 4H-SiC
    Cheng, Ping
    Zhang, Yu-Ming
    Zhang, Yi-Men
    Rengong Jingti Xuebao/Journal of Synthetic Crystals, 2012, 41 (04): : 1011 - 1014
  • [22] Planar defects in 4H-SiC PiN diodes
    Twigg, ME
    Stahlbush, RE
    Irvine, KG
    Sumakeris, JJ
    Chow, TP
    Lossee, PA
    Zhu, L
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 351 - 356
  • [23] Proton irradiation induced defects in 4H-SiC
    Storasta, L
    Carlsson, FHC
    Sridhara, SG
    Åberg, D
    Bergman, JP
    Hallén, A
    Janzén, E
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 431 - 434
  • [24] Study of Defects Generated by Standard- and Plasma- Implantation of Nitrogen Atoms in 4H-SiC Epitaxial Layers
    Ottaviani, Laurent
    Kazan, Michel
    Biondo, Stephane
    Tuomisto, Filip
    Milesi, Frederic
    Duchaine, Julian
    Torregrosa, Frank
    Palais, Olivier
    DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV, 2012, 725 : 41 - +
  • [25] Defect formation in 4H-SiC single crystal grown on the prismatic seeds
    Fadeev, A. Yu
    Lebedev, A. O.
    Tairov, Yu M.
    16TH RUSSIAN YOUTH CONFERENCE ON PHYSICS AND ASTRONOMY (PHYSICA.SPB/2013), 2014, 572
  • [26] Investigation of Photoluminescence Emission of Basal Plane Frank-type Defects in 4H-SiC Epilayers
    Kamata, Isaho
    Zhang, Xuan
    Tsuchida, Hidekazu
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 310 - 313
  • [27] DLTS study of defects in 6H-and 4H-SiC created by proton irradiation
    Davydov, DV
    Lebedev, AA
    Kozlovski, VV
    Savkina, NS
    Strel'chuk, AM
    PHYSICA B-CONDENSED MATTER, 2001, 308 : 641 - 644
  • [28] Slip of Basal Plane Dislocations in 4H-SiC Epitaxy
    Ohno, Toshiyuki
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 325 - 328
  • [29] Radiation Defects in Heterostructures 3C-SiC/4H-SiC
    Lebedev, A. A.
    Oganesyan, G. A.
    Kozlovski, V. V.
    Eliseyev, I. A.
    Bulat, P., V
    CRYSTALS, 2019, 9 (02):
  • [30] DFT Simulation of Stacking Faults Defects in 4H-SiC
    Wozny, Janusz
    Kovalchuk, Andrii
    Lisik, Zbigniew
    Podgorski, Jacek
    Bugalski, Piotr
    Kubiak, Andrzej
    Ruta, Lukasz
    2018 XIVTH INTERNATIONAL CONFERENCE ON PERSPECTIVE TECHNOLOGIES AND METHODS IN MEMS DESIGN (MEMSTECH), 2018, : 65 - 68
12345