Simulation of thermal properties of proton-implanted top-surface-emitting lasers. I. Analytical thermal model

A comprehensive analytical thermal model of proton-implanted top-surface-emitting lasers (PITSELs) is developed. In the model reasonable distributions of all important heat-generation mechanisms are taken into account, including nonradiative recombination, reabsorption of spontaneous radiation, free-carrier absorption of laser radiation as well as both volume and barrier Joule heating. Full self-consistency between the electrical and the thermal processes has been achieved including temperature dependences of thermal conductivities, threshold current, internal and external quantum efficiencies, voltage drop at the p-n junction, electrical resistivities and absorption coefficients.