The Effect of Laser Treatment on the Morphology of Graphene/CdTe X-Ray and γ-Ray Detectors

被引：0
|
作者：
Maslyanchuk, Olena [1 ]
Strebezhev, Viktor [1 ]
Fochuk, Petro [1 ]
Fodchuk, Ihor [1 ]
Sorokatyi, Mykola [1 ]
Bolotnikov, Aleksey [2 ]
James, R. B. [3 ]
机构：
[1] Yury Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
[2] Brookhaven Natl Lab, Upton, NY 11973 USA
[3] Savannah River Natl Lab, Aiken, SC 29808 USA
来源：
HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XXII | 2020年 / 11494卷
关键词：
CdTe detectors; Graphene; CdTe Schottky diode; laser treatment;
D O I：
10.1117/12.2570634
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Peculiarities of morphology and electric properties of X-ray and gamma-ray detectors developed by graphene deposition onto commercially available (111) oriented CdTe:Cl wafers has been investigated. Laser treatment of graphene contact using millisecond YAG-laser with an energy density of 0.1-4.5 J/cm(2) has been carried out in order to modify and improve their structure and phase state.
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页数：7
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