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The Effect of Laser Treatment on the Morphology of Graphene/CdTe X-Ray and γ-Ray Detectors
被引:0
|作者:
Maslyanchuk, Olena
[1
]
Strebezhev, Viktor
[1
]
Fochuk, Petro
[1
]
Fodchuk, Ihor
[1
]
Sorokatyi, Mykola
[1
]
Bolotnikov, Aleksey
[2
]
James, R. B.
[3
]
机构:
[1] Yury Fedkovych Chernivtsi Natl Univ, UA-58012 Chernovtsy, Ukraine
[2] Brookhaven Natl Lab, Upton, NY 11973 USA
[3] Savannah River Natl Lab, Aiken, SC 29808 USA
来源:
关键词:
CdTe detectors;
Graphene;
CdTe Schottky diode;
laser treatment;
D O I:
10.1117/12.2570634
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Peculiarities of morphology and electric properties of X-ray and gamma-ray detectors developed by graphene deposition onto commercially available (111) oriented CdTe:Cl wafers has been investigated. Laser treatment of graphene contact using millisecond YAG-laser with an energy density of 0.1-4.5 J/cm(2) has been carried out in order to modify and improve their structure and phase state.
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