Interconnected magnetic tunnel junctions for spin-logic applications

被引：9

作者：

Manfrini, Mauricio ^{[1
]}

Vaysset, Adrien ^{[1
]}

Wan, Danny ^{[1
]}

Raymenants, Eline ^{[1
,2
]}

Swerts, Johan ^{[1
]}

Rao, Siddharth ^{[1
]}

Zografos, Odysseas ^{[1
,2
]}

Souriau, Laurent ^{[1
]}

Gavan, Khashayar Babaei ^{[1
]}

Rassoul, Nouredine ^{[1
]}

Radisic, Dunja ^{[1
]}

Cupak, Miroslav ^{[1
]}

Dehan, Morin ^{[1
]}

Sayan, Safak ^{[3
]}

Nikonov, Dmitri E. ^{[3
]}

Manipatruni, Sasikanth ^{[3
]}

Young, Ian A. ^{[3
]}

Mocuta, Dan ^{[1
]}

Radu, Iuliana P. ^{[1
]}

机构：

[1] IMEC, Log Technol, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Mat Engn, Leuven, Belgium

[3] Intel Corp, Components Res, Hillsboro, OR 97124 USA

来源：

AIP ADVANCES | 2018年 / 8卷 / 05期

关键词：

INTEGRATED-CIRCUITS;

D O I：

10.1063/1.5007622

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

With the rapid progress of spintronic devices, spin-logic concepts hold promises of energy-delay conscious computation for efficient logic gate operations. We report on the electrical characterization of domain walls in interconnected magnetic tunnel junctions. By means of spin-transfer torque effect, domains walls are produced at the common free layer and its propagation towards the output pillar sensed by tunneling magneto-resistance. Domain pinning conditions are studied quasi-statically showing a strong dependence on pillar size, ferromagnetic free layer width and inter-pillar distance. Addressing pinning conditions are detrimental for cascading and fan-out of domain walls across nodes, enabling the realization of domain-wallbased logic technology. (C) 2018 Author(s).

引用

页数：6

共 50 条

[41] Spin torque, tunnel-current spin polarization, and magnetoresistance in MgO magnetic tunnel junctions
Fuchs, G. D.
Katine, J. A.
Kiselev, S. I.
Mauri, D.
Wooley, K. S.
Ralph, D. C.
Buhrman, R. A.
PHYSICAL REVIEW LETTERS, 2006, 96 (18)
[42] Metrology and metrics for spin-transfer-torque switched magnetic tunnel junctions in memory applications
Sun, Jonathan Z.
Safranski, Christopher
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2022, 563
[43] Magnetic tunnel junctions for magnetic random access memory applications
Guth, M
Schmerber, G
Dinia, A
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2): : 129 - 133
[44] Fabrication strategies for magnetic tunnel junctions with magnetoelectronic applications
Pong, Philip W. T.
Egelhoff, William F., Jr.
NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES IV, 2007, 6645
[45] Scaled spintronic logic device based on domain wall motion in magnetically interconnected tunnel junctions
Raymenants, E.
Wan, D.
Couet, S.
Zografos, O.
Nguyen, V. D.
Vaysset, A.
Souriau, L.
Thiam, A.
Manfrini, M.
Brus, S.
Heyns, M.
Mocuta, D.
Nikonov, D. E.
Manipatruni, S.
Young, I. A.
Devolder, T.
Radu, I. P.
2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2018,
[46] Microscopic theory of spin torque induced by spin dynamics in magnetic tunnel junctions
Miura, Daisuke
Sakuma, Akimasa
JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
[47] Spin-dependent tunneling in granular magnetic tunnel junctions
Petroff, F
Schelp, LF
Lee, SF
Fettar, F
Holody, P
Vaures, A
Maurice, JL
Fert, A
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1997, 175 (1-2) : 33 - 33
[48] Spin transfer torque in double barrier magnetic tunnel junctions
Theodonis, I.
Kalitsov, A.
Kioussis, N.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 310 (02) : 2043 - 2045
[49] Spin caloritronics in magnetic tunnel junctions: Ab initio studies
Czerner, Michael
Bachmann, Michael
Heiliger, Christian
PHYSICAL REVIEW B, 2011, 83 (13):
[50] Spin transfer switching in dual MgO magnetic tunnel junctions
Diao, Zhitao
Panchula, Alex
Ding, Yunfei
Pakala, Mahendra
Wang, Shengyuan
Li, Zhanjie
Apalkov, Dmytro
Nagai, Hideyasu
Driskill-Smith, Alexander
Wang, Lien-Chang
Chen, Eugene
Huai, Yiming
APPLIED PHYSICS LETTERS, 2007, 90 (13)

← 1 2 3 4 5 →