Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

被引:2
|
作者
Ahn, Ji-Hoon [1 ]
Kim, Ja-Yong [2 ]
机构
[1] Korea Maritime & Ocean Univ, Dept Elect Mat Engn, Busan 49112, South Korea
[2] SK Hynix Semicond Inc, Div Res & Dev, Icheon Si 467701, Kyoungki Do, South Korea
关键词
Capacitor electrode; Strontium ruthenate; Rapid thermal annealing; Atomic layer deposition; INSULATOR-METAL CAPACITORS; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; THIN-FILMS; THICKNESS;
D O I
10.1016/j.mee.2015.09.015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, we investigated the effect of annealing conditions on the formation of SrRuO3 films by the interfacial reaction of SrO/RuO2 hi-layer films. We found that the annealing temperature and thickness of the SrO layer along with the annealing atmosphere were critical variables in the formation of the conformal SrRuO3 film. By annealing SrO(20 nm)/RuO2 bi-layer film at 700 degrees C in O-2 atmosphere at 1 Tort, the conformal SrRuO3 film was formed. Finally, we evaluated the potential applicability of the SrRuO3 film as a functional electrode for perovskite-structured dielectrics, and the dielectric constant of SrTiO3 film deposited on the SrRuO3 electrode increased by almost 2.5 times in comparison with that of a film on a Ru electrode. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:62 / 65
页数:4
相关论文
共 50 条
  • [41] The effect of firing conditions on the properties films of Bi2O3-TiO2-Fe2O3 films
    Atkarskaya, AB
    Popovich, SA
    GLASS AND CERAMICS, 1997, 54 (1-2) : 48 - 51
  • [42] Effect of O2 Post Annealing and Plasma Treatment in Enhancing the Resistance Switching Characteristics of Pr0.7Ca0.3MnO3 Films with SrRuO3 Buffer Layers
    Joo, Sanghyun
    Sok, Junghyun
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2008, 53 (06) : 3427 - 3430
  • [43] Infinite-layer/perovskite oxide heterostructure-induced high-spin states in SrCuO2/SrRuO3 bilayer films
    Li, Zhe
    Chen, Xiaobing
    Chen, Yuansha
    Zhang, Qinghua
    Zhang, Hui
    Zhang, Jine
    Shi, Wenxiao
    He, Bin
    Zhang, Jinxing
    Song, Jinghua
    Han, Furong
    Liu, Banggui
    Gu, Lin
    Hu, Fengxia
    Chen, Yunzhong
    Shen, Baogen
    Sun, Jirong
    MATERIALS HORIZONS, 2021, 8 (12) : 3468 - 3476
  • [44] Effect of RuO2 electrode on polarization fatigue resistance of PbZr0.52Ti0.48O3 thin films
    Wang, B
    Kwok, KW
    Chan, HLW
    Choy, CL
    Tong, KY
    FERROELECTRICS, 2001, 260 (1-4) : 551 - 556
  • [45] Study of Al2O3/TiO2 reflectivity enhancing bi-layer films on bright aluminium substrates
    Cecchetto, L.
    Millon, C.
    Riassetto, D.
    Langlet, M.
    APPLIED SURFACE SCIENCE, 2008, 254 (06) : 1604 - 1607
  • [46] Interfacial layer formation in Gd2O3 films deposited directly on Si(001)
    Gupta, JA
    Landheer, D
    Sproule, GI
    McCaffrey, JP
    Graham, MJ
    Yang, KC
    Lu, ZH
    Lennard, WN
    APPLIED SURFACE SCIENCE, 2001, 173 (3-4) : 318 - 326
  • [47] Effect of laser fluence on outgrowth formation and interfacial reaction in YBCO/CeO2/Al2O3 films
    Develos, KD
    Yamasaki, H
    Nakagawa, Y
    Sawa, A
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2002, 372 (PART 2): : 642 - 648
  • [48] Structural stability of (Ba,Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films
    Choi, ES
    Park, SS
    Yoon, SG
    INTEGRATED FERROELECTRICS, 2002, 47 : 31 - 40
  • [49] Structural stability of (Ba, Sr)RuO3 electrodes on hydrogen annealing and effect of interfacial layers in (Ba,Sr)TiO3 thin films
    Choi, Eun-Suck
    Park, Sang-Shik
    Yoon, Soon-Gil
    Integrated Ferroelectrics, 2002, 47 : 31 - 40
  • [50] Reflection of Blue Light Using Bi-Layer Al2O3-TiO2 E-Beam Coating Films
    Liu, Jing
    Lin, Chi-Yu
    Tzou, Wen-Cheng
    Hsueh, Nai-Kuei
    Yang, Cheng-Fu
    Chen, Yushan
    CRYSTAL GROWTH & DESIGN, 2018, 18 (09) : 5426 - 5433