Effect of annealing conditions on formation of SrRuO3 films by interfacial reaction of SrO/RuO2 bi-layer films

被引：2
|
作者：
Ahn, Ji-Hoon [1 ]
Kim, Ja-Yong [2 ]
机构：
[1] Korea Maritime & Ocean Univ, Dept Elect Mat Engn, Busan 49112, South Korea
[2] SK Hynix Semicond Inc, Div Res & Dev, Icheon Si 467701, Kyoungki Do, South Korea
来源：
MICROELECTRONIC ENGINEERING | 2016年 / 149卷
关键词：
Capacitor electrode; Strontium ruthenate; Rapid thermal annealing; Atomic layer deposition; INSULATOR-METAL CAPACITORS; CHEMICAL-VAPOR-DEPOSITION; ATOMIC LAYER DEPOSITION; THIN-FILMS; THICKNESS;
D O I：
10.1016/j.mee.2015.09.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we investigated the effect of annealing conditions on the formation of SrRuO3 films by the interfacial reaction of SrO/RuO2 hi-layer films. We found that the annealing temperature and thickness of the SrO layer along with the annealing atmosphere were critical variables in the formation of the conformal SrRuO3 film. By annealing SrO(20 nm)/RuO2 bi-layer film at 700 degrees C in O-2 atmosphere at 1 Tort, the conformal SrRuO3 film was formed. Finally, we evaluated the potential applicability of the SrRuO3 film as a functional electrode for perovskite-structured dielectrics, and the dielectric constant of SrTiO3 film deposited on the SrRuO3 electrode increased by almost 2.5 times in comparison with that of a film on a Ru electrode. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：62 / 65
页数：4
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