Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

被引：99
|
作者：
Yasan, A [1 ]
McClintock, R [1 ]
Mayes, K [1 ]
Darvish, SR [1 ]
Kung, P [1 ]
Razeghi, M [1 ]
机构：
[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 05期
关键词：
D O I：
10.1063/1.1497709
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is similar to5 V with a differential resistance of similar to40 Omega. The peak emission wavelength redshifts similar to1 nm at high injection currents. (C) 2002 American Institute of Physics.
引用
收藏
页码：801 / 802
页数：2
相关论文
共 50 条
  • [31] Enhanced luminescence of top-emission organic light emitting diodes with ZnS/Ag/ZnS structure
    Liao, Wei-Fan
    Huang, Jei
    Ni, Chih-Jui
    Guo, Yoou-Bin
    Teng, Chun-Hao
    Hong, Franklin Chau-Nan
    OPTOELECTRONIC DEVICES: PHYSICS, FABRICATION, AND APPLICATION IV, 2007, 6766
  • [32] Improve Efficiency by Surface Treatment of Top-emission Flexible Polymer Light-emitting Diode
    Tu, Ming-Lung
    Su, Yan-Kuin
    Chen, Ruei-Tang
    Yu, Shin-Her
    2015 International Symposium on Next-Generation Electronics (ISNE), 2015,
  • [33] Erratum: "Transparent-cathode for top-emission organic light-emitting diodes" (vol 82, pg 2715, 2003)
    Han, S
    Feng, X
    Lu, ZH
    Johnson, D
    Wood, R
    APPLIED PHYSICS LETTERS, 2003, 83 (13) : 2719 - 2719
  • [34] Highly efficient top-emission organic light-emitting diode on an oxidized aluminum anode
    Lee, Jae-Jin
    Li, Peicheng
    Kung, Hao-Ting
    Lu, Zheng-Hong
    JOURNAL OF APPLIED PHYSICS, 2019, 125 (14)
  • [35] Colour tunability of polymeric light-emitting diodes with top emission architecture
    Hao, XT
    Zhu, FR
    Ong, KS
    Tan, LW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2006, 21 (01) : 19 - 24
  • [36] 341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes
    Smith, GA
    Dang, TN
    Nelson, TR
    Brown, JL
    Tsvetkov, D
    Usikov, A
    Dmitriev, V
    JOURNAL OF APPLIED PHYSICS, 2004, 95 (12) : 8247 - 8251
  • [37] Improved performance of 264 nm emission AlGaN-based deep ultraviolet light-emitting diodes
    Zhu, Y. H.
    Sumiya, S.
    Zhang, J. C.
    Miyoshi, M.
    Shibata, T.
    Kosaka, K.
    Tanaka, M.
    Egawa, T.
    ELECTRONICS LETTERS, 2008, 44 (07) : 493 - 494
  • [38] 341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes
    Smith, G.A., 1600, American Institute of Physics Inc. (95):
  • [39] Top-emission organic light emitting diodes with ink-jet printed self-aligned emission zone
    Satoh, Ryu-ichi
    Naka, Shigeki
    Shibata, Miki
    Okada, Hiroyuki
    Onnagawa, Hiroyoshi
    Miyabayashi, Takeshi
    Inoue, Toyokazu
    PROCEEDINGS OF THE TWENTY-FIFTH INTERNATIONAL DISPLAY RESEARCH CONFERENCE - EURODISPLAY 2005, 2005, : 389 - 392
  • [40] Electrical and optical characterization of GaN-based light-emitting diodes fabricated with top-emission and flip-chip structures
    Kim, Hyunsoo
    Lee, Sung-Nam
    Cho, Jaehee
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2010, 13 (03) : 180 - 184
12345