Top-emission ultraviolet light-emitting diodes with peak emission at 280 nm

被引：99
|
作者：
Yasan, A [1 ]
McClintock, R [1 ]
Mayes, K [1 ]
Darvish, SR [1 ]
Kung, P [1 ]
Razeghi, M [1 ]
机构：
[1] Northwestern Univ, Dept Elect & Comp Engn, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 05期
关键词：
D O I：
10.1063/1.1497709
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate light emission at 280 nm from UV light-emitting diodes consisting of AlInGaN/AlInGaN multiple quantum wells. Turn-on voltage of the devices is similar to5 V with a differential resistance of similar to40 Omega. The peak emission wavelength redshifts similar to1 nm at high injection currents. (C) 2002 American Institute of Physics.
引用
收藏
页码：801 / 802
页数：2
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