Growth of 3C-SiC on Si(100) by LPCVD and patterning of the grown layers

被引：2
|
作者：
Bakin, A [1 ]
Behrens, I [1 ]
Ivanov, A [1 ]
Peiner, E [1 ]
Piester, D [1 ]
Wehmann, HH [1 ]
Schlachetzki, A [1 ]
机构：
[1] Tech Univ Braunschweig, Inst Semicond Technol, DE-38106 Braunschweig, Germany
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
CVD; patterning; selective etching; selective growth; SiC on silicon;
D O I：
10.4028/www.scientific.net/MSF.389-393.327
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A low-cost approach to 3C-SiC low pressure chemical vapour deposition (LPCVD) growth and patterning have been developed and is described. LPCVD with ultra violet (UV) stimulation is used as a technique for the low-temperature growth of SiC on Si with a patterned SiO2 or silicon nitride mask. Examples of surface micromachined structures patterned by the described lift-off approach with an excellent etching selectivity of Si to SiC are presented. The approach to growth and patterning of SiC on Si can be employed for further pendeo-epitaxial growth or fabrication of micromechanical devices, gas sensors, or biomedical applications.
引用
收藏
页码：327 / 330
页数：4
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