Growth of 3C-SiC on Si(100) by LPCVD and patterning of the grown layers

被引：2

作者：

Bakin, A ^{[1
]}

Behrens, I ^{[1
]}

Ivanov, A ^{[1
]}

Peiner, E ^{[1
]}

Piester, D ^{[1
]}

Wehmann, HH ^{[1
]}

Schlachetzki, A ^{[1
]}

机构：

[1] Tech Univ Braunschweig, Inst Semicond Technol, DE-38106 Braunschweig, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷

关键词：

CVD; patterning; selective etching; selective growth; SiC on silicon;

D O I：

10.4028/www.scientific.net/MSF.389-393.327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A low-cost approach to 3C-SiC low pressure chemical vapour deposition (LPCVD) growth and patterning have been developed and is described. LPCVD with ultra violet (UV) stimulation is used as a technique for the low-temperature growth of SiC on Si with a patterned SiO2 or silicon nitride mask. Examples of surface micromachined structures patterned by the described lift-off approach with an excellent etching selectivity of Si to SiC are presented. The approach to growth and patterning of SiC on Si can be employed for further pendeo-epitaxial growth or fabrication of micromechanical devices, gas sensors, or biomedical applications.

引用

页码：327 / 330

页数：4

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