Growth of InGaN alloy on cubic GaN by metalorganic vapor-phase epitaxy

被引：0

作者：

Nakadaira, A ^{[1
]}

Tanaka, H ^{[1
]}

机构：

[1] Nippon Telegraph & Tel Corp, Cyber Space Labs, Musashino, Tokyo 1808585, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1999年 / 176卷 / 01期

关键词：

D O I：

10.1002/(SICI)1521-396X(199911)176:1<529::AID-PSSA529>3.0.CO;2-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cubic InGaN alloys were grown on cubic GaN/GaAs (100) using low-pressure metalorganic vapor-phase epitaxy. A high-resolution cross-sectional transmission electron microscope image revealed their cubic crystal structure. In0.03Ga0.97N grown at 770 degrees C showed near band edge emission at 3.12 eV and its peak width was 110 meV at room temperature. The indium molar fraction tended to decrease when the growth temperature increased above 720 degrees C It also decreased as the NH3 flow rate decreased. The lowest energy of the near-band edge emission of these InGaN alloys at room temperature was 2.98 eV.

引用

页码：529 / 534

页数：6

共 50 条

[41] Metalorganic vapor-phase epitaxial growth and characterization of cubic AlxGa1-xN alloy
Nakadaira, A
Tanaka, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B): : 1449 - 1452
[42] CARBON DOPING IN METALORGANIC VAPOR-PHASE EPITAXY
KUECH, TF
REDWING, JM
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 382 - 389
[43] Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
Kirchner, C
Schwegler, V
Eberhard, F
Kamp, M
Ebeling, KJ
Kornitzer, K
Ebner, T
Thonke, K
Sauer, R
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
APPLIED PHYSICS LETTERS, 1999, 75 (08) : 1098 - 1100
[44] InGaN/GaN double heterojunction bipolar transistor grown by metalorganic vapor phase epitaxy
Makimoto, T
Kumakura, K
Kobayashi, N
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 969 - 972
[45] DEVELOPMENTS IN METALORGANIC PRECURSORS FOR VAPOR-PHASE EPITAXY
JONES, AC
JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 505 - 511
[46] SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
KATO, Y
KITAMURA, S
HIRAMATSU, K
SAWAKI, N
JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) : 133 - 140
[47] Mechanisms of metalorganic vapor phase epitaxy of InGaN quantum wells on GaN microfacet structures
Ueda, M.
Hayashi, K.
Kondou, T.
Funato, M.
Kawakami, Y.
Narukawa, Y.
Mukai, T.
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4 NO 7 2007, 2007, 4 (07): : 2826 - +
[48] TRANSMISSION ELECTRON-MICROSCOPE OBSERVATION OF CUBIC GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY WITH DIMETHYLHYDRAZINE ON (001) GAAS
KUWANO, N
NAGATOMO, Y
KOBAYASHI, K
OKI, K
MIYOSHI, S
YAGUCHI, H
ONABE, K
SHIRAKI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (1A): : 18 - 22
[49] Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxy
Bhunia, S
Kawamura, T
Fujikawa, S
Watanabe, Y
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (1-2): : 138 - 142
[50] GROWTH-BEHAVIOR DURING NONPLANAR METALORGANIC VAPOR-PHASE EPITAXY
DEMEESTER, P
VANDAELE, P
BAETS, R
JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) : 2284 - 2290

← 1 2 3 4 5 →